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Si8230BB-B-IS1

产品描述4 A HB BASED PRPHL DRVR WITH PWM, PDSO16
产品类别半导体    模拟混合信号IC   
文件大小419KB,共52页
制造商SILABS
官网地址http://www.silabs.com
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Si8230BB-B-IS1概述

4 A HB BASED PRPHL DRVR WITH PWM, PDSO16

4 A 含脉宽调制基于HB的 PRPHL驱动, PDSO16

Si8230BB-B-IS1规格参数

参数名称属性值
功能数量1
端子数量16
最大工作温度125 Cel
最小工作温度-40 Cel
最大供电电压15.5 V
最小供电电压14.5 V
额定供电电压15 V
导通时间60 us
关断时间60 us
加工封装描述ROHS COMPLIANT, MO-012交流, SOIC-16
状态ACTIVE
包装形状矩形的
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式GULL WING
端子间距1.27 mm
端子位置
包装材料塑料/环氧树脂
温度等级AUTOMOTIVE
最大供电电压224 V
最小供电电压26.5 V
额定供电电压212 V
接口类型含脉宽调制基于HB的 PRPHL驱动
内置保护UNDER 电压
输出电流流动方向源 AND SINK
额定输出峰值电流限制4 A

文档预览

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Si823x
0.5
AND
4 . 0 A
MP
I S O
D R I V E R S
(2.5
AND
5
K
V
RMS
)
Features
Pin Assignments
Two completely isolated drivers
60 ns maximum propagation
in one package
delay

Up to 5 kV
RMS
input-to-output
Independent HS and LS inputs or
PWM input versions
isolation

Up to 1500 V
DC
peak driver-to-
Transient immunity >30 kV/µs
driver differential voltage
Overlap protection and
HS/LS and dual driver versions
programmable dead time
Up to 8 MHz switching frequency
Operating temperature range
0.5 A peak output (Si8230/1/2)
–40 to +125 °C
4.0 A peak output (Si8233/4/5/6)
UL/VDE/CSA approval
RoHS-compliant
SOIC-16 (Wide)
VIA
VIB
VDDI
GNDI
DISABLE
DT
NC
VDDI
1
2
3
4
5
6
7
8
16
15
14
VDDA
VOA
GNDA
NC
NC
VDDB
VOB
GNDB
Si8230
Si8233
13
12
11
10
9
Applications
SOIC-16 (Narrow)
VIA
1
2
3
16
15
14
VDDA
VOA
GNDA
NC
NC
VDDB
VOB
GNDB
Power delivery systems
Motor control systems
Isolated dc-dc power supplies
Lighting control systems
Plasma displays
Solar and industrial inverters
VIB
VDDI
GNDI
DISABLE
4
Si8230
13
5
6
7
8
Si8233
12
11
10
9
Description
The Si823x isolated driver family combines two independent, isolated
drivers into a single package. The Si8230/1/3/4 are high-side/low-side
drivers, and the Si8232/5/6 are dual drivers. Versions with peak output
currents of 0.5 A (Si8230/1/2) and 4.0 A (Si8233/4/5/6) are available. All
drivers operate with a maximum supply voltage of 24 V.
The Si823x drivers utilize Silicon Labs' proprietary silicon isolation
technology, which provides up to 5 kV
RMS
withstand voltage per UL1577,
and fast 60 ns propagation times. Driver outputs can be grounded to the
same or separate grounds or connected to a positive or negative voltage.
The TTL level compatible inputs with >400 mV hysteresis are available in
individual control input (Si8230/2/3/5/6) or PWM input (Si8231/4)
configurations. High integration, low propagation delay, small installed
size, flexibility, and cost-effectiveness make the Si823x family ideal for a
wide range of isolated MOSFET/IGBT gate drive applications.
DT
NC
VDDI
LGA-14 (5 x 5 mm)
GNDI
VIA
VIB
VDDI
DISABLE
DT
VDDI
1
2
3
4
5
6
7
14
13
12
VDDA
VOA
GNDA
NC
VDDB
VOB
GNDB
Si8230
Si8233
11
10
7
8
Patents Pending
Safety Approval
UL 1577 recognized

Up
VDE certification conformity

IEC
to 5000 Vrms for 1 minute
CSA component notice 5A
approval

IEC
60747-5-2 (VDE 0884 Part 2)

EN 60950 (reinforced insulation)
(Pending)
60950, 61010, 60601
(reinforced insulation)
Rev. 0.3 4/10
Copyright © 2010 by Silicon Laboratories
Si823x
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.

 
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