Si7958DP
New Product
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
40
r
DS(on)
(W)
0.0165 @ V
GS
= 10 V
0.020 @ V
GS
= 4.5 V
I
D
(A)
11.3
10.3
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKr
D
Dual MOSFET for Space Savings
Package
APPLICATIONS
D
Automotive*
−
12-V Boardnet
−
Motor Drives
−
High-Side Switch
*Contact factory for automotive qualification
PowerPAK SO-8
D
1
D
2
6.15 mm
S1
1
2
G1
S2
5.15 mm
3
4
G2
D1
8
7
G
1
D1
D2
G
2
6
5
D2
Bottom View
Ordering Information: Si7958DP-T1—E3 (Lead Free)
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
L = 0.1 mH
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
10 secs
40
"20
11.3
9.0
40
2.9
35
61
3.5
2.2
Steady State
Unit
V
7.2
5.8
A
1.2
mJ
1.4
0.9
W
_C
−55
to 150
THERMAL RESISTANCE RATINGS
Parameter
M i
ti t A bi t
Maximum J
Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
26
60
2.2
Maximum
35
85
2.7
Unit
_C/W
C/W
1
Si7958DP
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 11.3 A
V
GS
= 4.5 V, I
D
= 10.3 A
V
DS
= 15 V, I
D
= 11.3 A
I
S
= 2.9 A, V
GS
= 0 V
30
0.013
0.016
30
0.8
1.2
0.0165
0.020
1
3
"100
1
5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
V
DD
= 20 V, R
L
= 20
W
I
D
^
1 A, V
GEN
= 10 V, R
g
= 6
W
f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 11.3 A
50
8.8
10.4
1.9
17
17
66
17
31
30
30
100
30
60
ns
W
75
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V
GS
= 10 thru 4 V
32
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
30
40
Transfer Characteristics
24
20
16
8
3V
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
10
T
C
= 125_C
25_C
0
0.0
−55_C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
www.vishay.com
2
Si7958DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
r
DS(on)
−
On-Resistance (
W
)
0.025
C
−
Capacitance (pF)
0.020
V
GS
= 4.5 V
0.015
0.010
0.005
0.000
0.0
V
GS
= 10 V
Vishay Siliconix
On-Resistance vs. Drain Current
4000
3500
3000
2500
2000
1500
1000
500
0
C
oss
Capacitance
C
iss
C
rss
8.0
16.0
24.0
32.0
40.0
0
8
16
24
32
40
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 20 V
I
D
= 11.3 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 11.3 A
8
6
4
2
0
0
10
20
30
40
50
Q
g
−
Total Gate Charge (nC)
r
DS(on)
−
On-Resistance (
W)
(Normalized)
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40
0.05
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
r
DS(on)
−
On-Resistance (
W
)
0.04
I
D
= 11.3 A
0.03
I
S
−
Source Current (A)
0.02
T
J
= 25_C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
www.vishay.com
3
Si7958DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
80
−0.0
V
GS(th)
Variance (V)
−0.2
−0.4
−0.6
−0.8
20
−1.0
−1.2
−50
0
0.001
I
D
= 250
mA
Power (W)
60
100
Single Pulse Power
40
−25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
−
Temperature (_C)
100
Safe Operating Area, Junction-To-Ambient
r
DS(on)
Limited
I
DM
Limited
P(t) = 0.0001
P(t) = 0.001
10
I
D
−
Drain Current (A)
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
1
10
P(t) = 1
P(t) = 10
dc
0.01
0.1
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 60_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
Si7958DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
0.01
10
−4
10
−3
10
−2
Square Wave Pulse Duration (sec)
10
−1
1
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
www.vishay.com
5
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