Si7948DP
New Product
Vishay Siliconix
Dual N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
60
r
DS(on)
(W)
0.075 @ V
GS
= 10 V
0.100 @ V
GS
= 4.5 V
I
D
(A)
4.6
4.0
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKr
D
Dual MOSFET for Space Savings
Package
APPLICATIONS
D
Automotive
- ABS
- Coil Driver
- Load Switch
D
1
D
2
PowerPAKr SO-8
6.15 mm
S1
1
2
G1
S2
5.15 mm
3
4
G2
D1
8
7
G
1
D1
D2
G
2
6
5
D2
Bottom View
Ordering Information: Si7948DP-T1
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
L = 0.1 mH
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
10 secs
60
"20
4.6
3.6
15
2.7
15
11
3.3
2.1
Steady State
Unit
V
3.0
2.4
A
1.2
mJ
1.4
0.9
W
_C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72403
S-31867—Rev. A, 15-Sep-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
29
60
4.0
Maximum
38
85
5.2
Unit
_C/W
C/W
1
Si7948DP
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4.6 A
V
GS
= 4.5 V, I
D
= 4.0 A
V
DS
= 15 V, I
D
= 4.6 A
I
S
= 2.7 A, V
GS
= 0 V
15
0.060
0.080
6
0.8
1.2
0.075
0.100
1
3
"100
1
5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.7 A, di/dt = 100 A/ms
V
DD
= 30 V, R
L
= 2
W
I
D
^
15 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 30 V, V
GS
= 10 V, I
D
= 15 A
12
2
3.5
1.5
7
8
15
7
30
20
25
40
20
60
ns
W
20
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
15
V
GS
= 10 thru 4 V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
12
15
Transfer Characteristics
9
9
6
3V
3
6
T
C
= 125_C
3
25_C
-55_C
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72403
S-31867—Rev. A, 15-Sep-03
2
Si7948DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.12
r
DS(on)
- On-Resistance (
W
)
0.10
C - Capacitance (pF)
V
GS
= 4.5 V
0.08
V
GS
= 10 V
0.06
0.04
0.02
0.00
0
3
6
9
12
15
Vishay Siliconix
On-Resistance vs. Drain Current
800
700
600
500
400
300
200
100
0
0
4
C
rss
Capacitance
C
iss
C
oss
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
20
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 30 V
I
D
= 15 A
16
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
0
4
8
12
16
20
24
Q
g
- Total Gate Charge (nC)
0.6
-50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 10 A
12
8
4
r
DS(on)
- On-Resistance (
W)
(Normalized)
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40
0.200
0.175
r
DS(on)
- On-Resistance (
W
)
I
S
- Source Current (A)
T
J
= 150_C
10
0.150
0.125
0.100
0.075
0.050
0.025
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 4.6 A
T
J
= 25_C
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72403
S-31867—Rev. A, 15-Sep-03
www.vishay.com
3
Si7948DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
80
0.2
V
GS(th)
Variance (V)
-0.0
-0.2
-0.4
-0.6
20
-0.8
-1.0
-50
0
0.001
I
D
= 250
mA
Power (W)
60
T
A
= 25_C
Single Pulse
100
Single Pulse Power
40
-25
0
25
50
75
100
125
150
0.01
0.1
Time (sec)
1
10
T
J
- Temperature (_C)
100
Safe Operating Area, Junction-to-Case
I
DM
Limited
10
ms
10
I
D
- Drain Current (A)
r
DS(on)
Limited
100
ms
1 ms
10 ms
1
0.1
I
D(on)
Limited
T
A
= 25_C
Single Pulse
BV
DSS
Limited
1
10
100 ms
1s
10 s
dc, 100 S
100
0.01
0.1
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 60_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72403
S-31867—Rev. A, 15-Sep-03
Si7948DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 72403
S-31867—Rev. A, 15-Sep-03
www.vishay.com
5
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