Si7940DP
New Product
Vishay Siliconix
Dual N-Channel 12-V (D-S) MOSFET
FEATURES
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
D
PWM Optimized
I
D
(A)
11.8
9.8
PRODUCT SUMMARY
V
DS
(V)
12
r
DS(on)
(W)
0.017 @ V
GS
= 4.5 V
0.025 @ V
GS
= 2.5 V
APPLICATIONS
D
Point-of-Load Synchronous Rectifier
- 5-V or 3.3-V BUS Step Down
- Q
g
Optimized for 500-kHz + Operation
D
Synchronous Buck Shoot-Through Resistant
D
1
D
2
PowerPAKt
6.15 mm
S1
1
2
5.15 mm
G1
S2
3
4
D1
G2
G
1
G
2
8
7
D1
D2
6
5
D2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
12
"8
11.8
Steady State
Unit
V
7.6
6.1
20
A
1.1
1.4
0.9
-55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
9.5
2.9
3.5
2.2
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum
Junction-to-Ambient
a
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
26
60
3.9
Maximum
35
85
5.5
Unit
_C/W
C/W
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71845
S-21167—Rev. B, 29-Jul-02
www.vishay.com
1
Si7940DP
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= 9.6 V, V
GS
= 0 V
V
DS
= 9.6 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 11.8 A
V
GS
= 2.5 V, I
D
= 9.8 A
V
DS
= 5 V, I
D
= 11.8 A
I
S
= 2.9 A, V
GS
= 0 V
20
0.014
0.020
32
0.77
1.2
0.017
0.025
S
V
0.6
1.5
"100
1
5
V
nA
mA
m
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
V
DD
= 6 V, R
L
= 6
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 11.8 A
11.5
3.2
2.5
30
50
60
25
40
45
75
90
40
80
ns
17
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 5 thru 2.5 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
Transfer Characteristics
12
2V
8
12
8
T
C
= 125_C
4
25_C
-55
_C
4
1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71845
S-21167—Rev. B, 29-Jul-02
Si7940DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
r
DS(on)
- On-Resistance (
W
)
2500
Vishay Siliconix
Capacitance
C - Capacitance (pF)
0.04
2000
C
iss
1500
0.03
V
GS
= 4.5 V
0.02
V
GS
= 2.5 V
0.01
1000
C
oss
500
C
rss
0.00
0
4
8
12
16
20
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 11.8 A
4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 11.8 A
1.4
3
r
DS(on)
- On-Resistance (
W)
(Normalized)
6
9
12
15
1.2
2
1.0
1
0.8
0
0
3
Q
g
- Total Gate Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20
T
J
= 150_C
I
S
- Source Current (A)
10
r
DS(on)
- On-Resistance (
W
)
0.04
0.05
On-Resistance vs. Gate-to-Source Voltage
I
D
= 5 A
0.03
I
D
= 11.8 A
0.02
T
J
= 25_C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71845
S-21167—Rev. B, 29-Jul-02
www.vishay.com
3
Si7940DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
40
Single Pulse Power
0.2
V
GS(th)
Variance (V)
32
I
D
= 250
mA
Power (W)
24
-0.0
-0.2
16
-0.4
8
-0.6
-50
-25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
Safe Operating Area, Junction-To-Ambient
100
r
DS(on)
Limited
10
I
D
- Drain Current (A)
I
DM
Limited
1 ms
10 ms
1
I
D(on)
Limited
100 ms
1s
10 s
dc
0.1
T
C
= 25_C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 60_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 71845
S-21167—Rev. B, 29-Jul-02
Si7940DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
Vishay Siliconix
0.01
10
- 4
10
- 3
10
- 2
Square Wave Pulse Duration (sec)
10
- 1
1
Document Number: 71845
S-21167—Rev. B, 29-Jul-02
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
