Si7922DN
New Product
Vishay Siliconix
Dual N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
100
FEATURES
I
D
(A)
2.5
2.3
r
DS(on)
(W)
0.195 @ V
GS
= 10 V
0.230 @ V
GS
= 6 V
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKt
Package,
1
/
3
the Space of An SO-8 While
Thermally Comparable
D
PWM Optimized
APPLICATIONS
D
DC/DC Primary-Side Switch
D
48-V Battery Monitoring
PowerPAKt 1212-8
D
1
3.30 mm
S1
D
2
1
2
3.30 mm
G1
S2
3
4
D1
G2
G
1
G
2
8
7
D1
D2
6
5
D2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
0.1 mH
T
A
= 25_C
T
A
= 85_C
Symbol
V
DS
V
GS
10 secs
100
"20
2.5
Steady State
Unit
V
1.8
1.3
10
5
1.25
mJ
1.1
1.3
0.69
-55 to 150
W
_C
A
A
I
D
I
DM
I
AS
E
AS
I
S
P
D
T
J
, T
stg
1.8
2.2
2.6
1.4
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum
Junction-to-Ambient
a
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
38
77
4.3
Maximum
48
94
5.4
Unit
_C/W
C/W
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72031
S-21976—Rev. A, 04-Nov-02
www.vishay.com
1
Si7922DN
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 85_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 6 V, I
D
= 2.3 A
V
DS
= 10 V, I
D
= 2.5 A
I
S
= 2.2 A, V
GS
= 0 V
10
0.162
0.190
5.3
0.8
1.2
0.195
0.230
S
V
2
4
"100
1
5
V
nA
mA
m
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.2 A, di/dt = 100 A/ms
V
DD
= 50 V, R
L
= 50
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
V
DS
= 50 V, V
GS
= 10 V, I
D
= 2.5 A
5.2
1.1
1.9
1.7
7
11
8
11
40
15
20
15
20
80
ns
W
8
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 10 thru 6 V
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
Transfer Characteristics
6
5V
4
6
4
T
C
= 125_C
2
25_C
-55
_C
0
2
3V
0
0
1
2
3
4
5
6
7
8
4V
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72031
S-21976—Rev. A, 04-Nov-02
www.vishay.com
2
Si7922DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.5
r
DS(on)
- On-Resistance (
W
)
320
280
C - Capacitance (pF)
0.4
240
200
160
120
80
C
oss
40
0.0
0
2
4
6
8
10
0
0
C
rss
20
40
60
80
100
C
iss
Vishay Siliconix
Capacitance
0.3
V
GS
= 6 V
0.2
V
GS
= 10 V
0.1
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 50 V
I
D
= 2.5 A
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
0
1
2
3
4
5
6
Q
g
- Total Gate Charge (nC)
0.6
-50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.5 A
6
4
2
r
DS(on)
- On-Resistance (
W)
(Normalized)
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
0.5
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
- On-Resistance (
W
)
0.4
I
S
- Source Current (A)
0.3
I
D
= 2.5 A
0.2
T
J
= 150_C
0.1
T
J
= 25_C
1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72031
S-21976—Rev. A, 04-Nov-02
www.vishay.com
3
Si7922DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
40
0.2
V
GS(th)
Variance (V)
-0.0
-0.2
-0.4
-0.6
10
-0.8
-1.0
-50
0
0.001
I
D
= 250
mA
Power (W)
30
50
Single Pulse Power
20
-25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
Safe Operating Area, Junction-To-Ambient
100
I
DM
Limited
10
I
D
- Drain Current (A)
r
DS(on)
Limited
P(t) = 0.0001
1
P(t) = 0.001
I
D(on)
Limited
0.1
T
A
= 25_C
Single Pulse
0.01
0.1
1
10
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
BV
DSS
Limited
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 77_C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72031
S-21976—Rev. A, 04-Nov-02
Si7922DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
Single Pulse
0.05
Vishay Siliconix
0.01
10
- 4
10
- 3
10
- 2
Square Wave Pulse Duration (sec)
10
- 1
1
NOTE:
The minimum creepage between D1 and D2 for this 100-V device is 0.2 mm. Please see PowerPAK 1212-8 outline drawing, document # 71656, for more infor-
mation.
Document Number: 72031
S-21976—Rev. A, 04-Nov-02
www.vishay.com
5
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
