Si7902EDN
Preliminary Information
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
8.3
8.0
6.7
r
DS(on)
(W)
0.028 @ V
GS
= 4.5 V
0.030 @ V
GS
= 3.7 V
0.043 @ V
GS
= 2.5 V
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
D
3000-V ESD Protection
APPLICATIONS
D
Protection Switch for 1-2 Li-ion/LiP Batteries
D
D
PowerPAKt 1212-8
3.30 mm
S1
1
2
3
G1
S2
3.30 mm
1.8 kW
G2
4
1.8 kW
G
2
G
1
D
8
7
6
5
D
D
D
S
1
N-Channel
N-Channel
S
2
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
Symbol
V
DS
V
GS
10 secs
30
"12
8.3
Steady State
Unit
V
5.6
4.0
40
A
1.3
1.5
0.79
–55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
6.0
2.7
3.2
1.7
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
30
65
1.9
Maximum
38
82
2.4
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
This data sheet contains preliminary specifications that are subject to change.
Document Number: 71801
S-05696—Rev. A, 18-Feb-02
www.vishay.com
1
Si7902EDN
Vishay Siliconix
Preliminary Information
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"4.5
V
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85_C
V
DS
w
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 8.3 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 3.7 V, I
D
= 8.0 A
V
GS
= 2.5 V, I
D
= 3.0 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= 15 V, I
D
= 8.3 A
I
S
= 2.7 A, V
GS
= 0 V
30
0.023
0.025
0.035
26
0.75
1.2
0.028
0.030
0.043
S
V
W
0.60
"1
"10
1
20
V
mA
mA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8.3 A
10
2.3
2.4
0.9
1.5
2.5
2.5
1.5
2.5
4.0
4.0
ms
m
15
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
0.8
1000
Gate Current vs. Gate-Source Voltage
100
I
GSS
– Gate Current (mA)
0.6
I
GSS
– Gate Current (
mA)
10
T
J
= 150_C
1
T
J
= 25_C
0.1
0.01
0.4
0.2
0.0
0
3
6
9
12
15
0.001
0
3
6
9
12
15
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71801
S-05696—Rev. A, 18-Feb-02
www.vishay.com
2
Si7902EDN
Preliminary Information
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 2 V
24
I
D
– Drain Current (A)
2.5 V
18
I
D
– Drain Current (A)
24
30
Vishay Siliconix
Transfer Characteristics
18
12
12
T
C
= 125_C
6
25_C
–55_C
6
2V
1.5 V
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.08
V
GS
– Gate-to-Source Voltage (V)
5
V
DS
= 15 V
I
D
= 8.3 A
Gate Charge
r
DS(on)
– On-Resistance (
W
)
4
0.06
3
0.04
V
GS
= 2.5 V
V
GS
= 3.7 V
2
0.02
V
GS
= 4.5 V
1
0.00
0
6
12
18
24
30
0
0
2
4
6
8
10
I
D
– Drain Current (A)
Q
g
– Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
1.8
V
GS
= 4.5 V
I
D
= 8.3 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Document Number: 71801
S-05696—Rev. A, 18-Feb-02
www.vishay.com
3
Si7902EDN
Vishay Siliconix
Preliminary Information
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
0.08
I
D
= 3 A
r
DS(on)
– On-Resistance (
W
)
I
S
– Source Current (A)
0.06
10
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
I
D
= 8.3 A
0.04
T
J
= 25_C
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
0.2
V
GS(th)
Variance (V)
Power (W)
40
50
Single Pulse Power, Juncion-To-Ambient
–0.0
30
–0.2
20
–0.4
10
–0.6
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71801
S-05696—Rev. A, 18-Feb-02
Si7902EDN
Preliminary Information
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10
–4
10
–3
10
–2
Square Wave Pulse Duration (sec)
10
–1
1
Document Number: 71801
S-05696—Rev. A, 18-Feb-02
www.vishay.com
5
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