Si7806BDN
New Product
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(Ω)
0.0145 at V
GS
= 10 V
0.0205 at V
GS
= 4.5 V
I
D
(A)
12.6
10.6
FEATURES
• TrenchFET
®
Power MOSFETS
• PWM Optimized
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
RoHS
COMPLIANT
APPLICATIONS
• DC/DC Converters
- Secondary Synchronous Rectifier
- High-Side MOSFET in Synchronous Buck
PowerPAK 1212-8
3.30 mm
S
1
2
3
S
S
3.30 mm
D
G
4
D
8
7
6
5
D
D
D
G
Bottom
View
Ordering Information: Si7806BDN-T1-E3 (Lead (Pb)-free)
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
30
± 20
12.6
10.1
40
3.2
3.8
2.0
- 55 to 150
1.3
1.5
0.8
8.0
6.4
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t
≤
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
°C/W
Document Number: 73081
S-60790-Rev. B, 08-May-06
www.vishay.com
1
Si7806BDN
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gt
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3.2 A, di/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
f = 10 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 12.6 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 12.6 A
8.5
19
3.6
3.0
2
8
12
25
10
35
15
20
40
20
70
ns
Ω
11
24
nC
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
Test Conditions
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12.6 A
V
GS
= 4.5 V, I
D
= 10.6 A
V
DS
= 15 V, I
D
= 12.6 A
I
S
= 3.2 A, V
GS
= 0 V
40
0.012
0.017
34
0.77
1.2
0.0145
0.0205
Min
1.0
Typ
Max
3
± 100
1
5
Unit
V
nA
µA
A
Ω
S
V
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C unless noted
40
35
30
I
D
− Drain C
u
rrent (A)
25
20
15
10
5
0
0
1
2
3
4
5
3
V
V
GS
= 10 thru 5
V
40
35
4
V
I
D
− Drain C
u
rrent (A)
30
25
20
15
T
C
= 125 °C
10
25 °C
5
- 55 °C
0
0
1
2
3
4
5
V
DS
− Drain-to-Source
Voltage
(V)
V
GS
− Gate-to-Source
Voltage
(V)
Output Characteristics
Transfer Characteristics
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Document Number: 73081
S-60790-Rev. B, 08-May-06
Si7806BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS
0.040
0.035
r
DS(on)
− On-Resistance (Ω)
C − Capacitance (pF)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
5
10
15
20
25
30
35
40
V
GS
= 4.5
V
25 °C unless noted
1400
1200
1000
800
600
400
200
0
0
5
10
15
20
25
30
C
rss
C
oss
C
iss
V
GS
= 10
V
I
D
− Drain Current (A)
V
DS
− Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
V
GS
− Gate-to-So
u
rce
V
oltage (
V
)
V
DS
= 15
V
I
D
= 12.6 A
r
DS(on)
− On-Resistance
(
N
ormalized)
1.8
V
GS
= 10
V
I
D
= 12.6 A
Capacitance
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
− Total Gate Charge (nC)
T
J
− Junction Temperature (°C)
Gate Charge
50
0.030
On-Resistance vs. Junction Temperature
0.025
r
DS(on)
− On-Resistance (Ω)
I
S
− So
u
rce C
u
rrent (A)
I
D
= 2 A
I
D
= 12.6 A
T
J
= 150 °C
10
0.020
0.015
0.010
T
J
= 25 °C
0.005
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
− Source-to-Drain
Voltage
(V)
V
GS
− Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73081
S-60790-Rev. B, 08-May-06
www.vishay.com
3
Si7806BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless noted
0.6
0.4
0.2
V
GS(th)
V
ariance (
V
)
0.0
- 0.2
- 0.4
- 0.6
10
- 0.8
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
− Temperature (°C)
Po
w
er (
W
)
30
I
D
= 250
µA
40
50
20
Threshold Voltage
100
r
DS(on)
Limited
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
P(t) = 0.0001
10
I
D
− Drain C
u
rrent (A)
P(t) = 0.001
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
0.1
T
A
= 25 °C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
P(t) = 10
dc
V
DS
− Drain-to-Source
Voltage
(V)
Safe Operating Area
2
1
N
ormalized Effecti
v
e Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square
Wave
Pulse Duration (sec)
3. T
JM
− T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73081
S-60790-Rev. B, 08-May-06
Si7806BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless noted
2
1
N
ormalized Effecti
v
e Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10
-4
10
-3
10
-2
Square
Wave
Pulse Duration (sec)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
http://www.vishay.com/ppg?73081.
Document Number: 73081
S-60790-Rev. B, 08-May-06
www.vishay.com
5
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