Si7448DP
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
FEATURES
I
D
(A)
22
19
r
DS(on)
(W)
0.0065 @ V
GS
= 4.5 V
0.009 @ V
GS
= 2.5 V
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D
100% R
g
Tested
APPLICATIONS
D
Synchronous Rectifier - Low Output Voltage
D
Portable Computer Battery Selection or
Protection
PowerPAK SO-8
D
6.15 mm
S
1
2
3
4
D
8
7
6
5
D
D
D
S
S
G
5.15 mm
G
S
N-Channel MOSFET
Bottom View
Ordering Information: Si7448DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
20
"12
22
Steady State
Unit
V
13.4
10.7
50
A
1.6
1.9
1.2
-55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
17.6
4.3
5.2
3.3
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71635
S-31728—Rev. B, 18-Aug-03
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
19
52
1.5
Maximum
24
65
1.8
Unit
_C/W
C/W
1
Si7448DP
Vishay Siliconix
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
NO TAG
Drain-Source On-State Resistance
NO TAG
Forward Transconductance
NO TAG
Diode Forward Voltage
NO TAG
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
w
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 22 A
V
GS
= 2.5 V, I
D
= 19 A
V
DS
= 15 V, I
D
= 22 A
I
S
= 3 A, V
GS
= 0 V
50
0.0054
0.0075
90
0.8
1.2
0.0065
0.009
S
V
0.6
"100
1
20
V
nA
mA
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
NO TAG
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3 A, di/dt = 100 A/ms
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
0.2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 21 A
38
8
8.5
0.9
22
22
125
60
60
1.1
35
35
190
90
90
ns
W
50
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 4.5 thru 2.5 V
40
2V
I
D
- Drain Current (A)
30
I
D
- Drain Current (A)
30
40
50
Transfer Characteristics
20
20
T
C
= 125_C
10
25_C
-55_C
0
0.0
10
1.5 V
0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
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Document Number: 71635
S-31728—Rev. B, 18-Aug-03
Si7448DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.012
7000
6000
C - Capacitance (pF)
C
iss
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
0
4
8
12
16
20
C
rss
C
oss
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.010
V
GS
= 2.5 V
V
GS
= 4.5 V
0.008
0.006
0.004
0.002
0.000
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 22 A
1.6
On-Resistance vs. Junction Temperature
3
r
DS(on)
- On-Resistance (
W)
(Normalized)
4
1.4
V
GS
= 10 V
I
D
= 22 A
1.2
2
1.0
1
0.8
0
0
8
16
24
32
40
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.020
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
- On-Resistance (
W
)
I
S
- Source Current (A)
0.015
I
D
= 22 A
T
J
= 150_C
10
0.010
T
J
= 25_C
0.005
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71635
S-31728—Rev. B, 18-Aug-03
www.vishay.com
3
Si7448DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
0.2
V
GS(th)
Variance (V)
-0.0
-0.2
-0.4
-0.6
20
-0.8
-1.0
-50
0
-25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
- Temperature (_C)
Power (W)
60
I
D
= 250
mA
80
100
Single Pulse Power, Juncion-To-Ambient
40
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68_C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
4
Document Number: 71635
S-31728—Rev. B, 18-Aug-03
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