b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed cop-
per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7404DN
Vishay Siliconix
MOSFET SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery
Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3.2 A, dI/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 4.5 V, R
G
= 6
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 13.3 A
20
5.8
7.1
27
39
64
33
45
40
60
100
50
90
ns
30
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 13.3 A
V
GS
= 4.5 V, I
D
=12.4 A
V
GS
= 2.5 V, I
D
= 5 A
V
DS
= 5 V, I
D
= 13.3 A
I
S
= 3.2 A, V
GS
= 0 V
40
0.010
0.0125
0.019
50
0.75
1.2
0.013
0.015
0.022
S
V
0.6
1.5
± 100
1
5
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
40
35
30
I
D
- Drain Current (A)
25
20
15
10
5
1, 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.0
0.5
1.0
1.5
2V
I
D
- Drain Current (A)
V
GS
= 10 thru 3 V
2.5 V
40
35
30
25
20
15
10
5
T
C
= 125 °C
25 °C
- 55 °C
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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2
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7404DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
0.05
3000
R
DS(on)
- On-Resistance (Ω)
0.04
C - Capacitance (pF)
2500
2000
0.03
V
GS
= 2.5 V
0.02
V
GS
= 4.5 V
0.01
V
GS
= 10 V
0.00
0
5
10
15
20
25
30
35
40
C
iss
1500
1000
500
C
oss
C
rss
0
5
10
15
20
25
30
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
DS
= 15 V
I
D
= 13.3 A
R
DS(on)
- On-Resistance
(Normalized)
1.8
V
GS
= 10 V
I
D
= 13.3 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
10
20
30
40
50
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
50
0.05
On-Resistance vs. Junction Temperature
I
D
= 13.3 A
R
DS(on)
- On-Resistance (Ω)
0.04
I
D
= 5 A
0.03
I
S
- Source Current (A)
T
J
= 150 °C
10
0.02
T
J
= 25 °C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7404DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
0.30
I
D
= 2 mA
40
50
0.15
V
GS(th)
Variance (V)
0.00
Power (W)
30
- 0.15
20
- 0.30
10
- 0.45
- 0.60
- 50
- 25
0
25
50
75
T
J
- Temperature (°C)
100
125
150
0
0.01
0.1
1
10
Time (s)
100
600
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
100 μs
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
T
A
= 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.1
1s
10 s
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71658.
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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