Si7401DN_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RT1
RT2
RT3
RT4
Junction to
CT1
CT2
CT3
CT4
Ambient
4.5197
7.4284
11.8825
56.6379
Ambient
6.7430 m
32.7582 m
109.4727 m
1.1804
Case
362.3679 u
504.3467 m
972.1139 m
937.1926 m
Case
1.9260 m
787.5516 u
18.2079 m
9.3126 m
Foot
N/A
N/A
N/A
N/A
Foot
N/A
N/A
N/A
N/A
Thermal Capacitance (Joules/°C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73834
Revision 03-Mar-06
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Si7401DN_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RF1
RF2
RF3
RF4
Junction to
CF1
CF2
CF3
CF4
Note: NA indicates not applicable
Ambient
7.8647
9.3907
10.7274
52.6417
Ambient
6.1206 m
24.0557 m
148.5836 m
1.1181
Case
1.8142 m
670.9463 m
1.0320
691.0146 m
Case
125.4667 u
695.7232 u
6.0783 m
527.9622 u
Foot
N/A
N/A
N/A
N/A
Foot
N/A
N/A
N/A
N/A
Thermal Capacitance (Joules/°C)
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 73834
Revision 03-Mar-06
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