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SI7366DP_05

产品描述N-Channel 20-V (D-S) MOSFET
文件大小92KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
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SI7366DP_05概述

N-Channel 20-V (D-S) MOSFET

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Si7366DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(Ω)
0.0055 at V
GS
= 10 V
0.009 at V
GS
= 4.5 V
I
D
(A)
20
16
FEATURES
Halogen-free available
TrenchFET
®
Power MOSFET
• Q
g
Optimized
RoHS
COMPLIANT
APPLICATIONS
• Synchronous Rectifier for DC/DC
PowerPAK
®
SO-8
6.15 mm
S
1
2
3
S
S
5.15 mm
G
4
D
D
8
7
6
5
D
D
D
G
Bottom View
Ordering Information:
Si7366DP-T1-E3 (Lead (Pb)-free)
Si7366DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b,c
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 s
Steady State
20
± 20
20
17
50
4.1
5
3.2
- 55 to 150
260
1.4
1.7
1.1
13
10
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t
10 s
Steady State
Steady State
Symbol
R
thJA
Typical
20
53
3.4
Maximum
25
70
4.5
Unit
°C/W
R
thJC
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1” x 1” FR4 board.
b. See Solder Profile (
http://www.vishay.com/ppg?73257).
The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. .
Document Number: 72296
S-80440-Rev. C, 03-Mar-08
www.vishay.com
1

 
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