Si7356DP
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D
Ultra-Low On-Resistance Using High Density
TrenchFETr Gen II Power MOSFET Technology
D
New Low Thermal Resistance PowerPAKr Package
with Low 1.07-mm Profile
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.003 @ V
GS
= 10 V
0.004 @ V
GS
= 4.5 V
I
D
(A)
30
27
APPLICATIONS
D
Low-Side DC/DC Conversion
- Notebook
- Server
- Workstation
D
Point-of-Load Conversion
PowerPAK SO-8
6.15 mm
S
1
2
S
3
S
5.15 mm
D
4
D
8
7
D
6
D
5
D
G
G
S
N-Channel MOSFET
Bottom View
Ordering Information: Si7356DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
30
"20
30
25
70
4.5
5.4
3.4
Steady State
Unit
V
18
15
A
1.8
1.9
1.2
- 55 to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72222
S-32039—Rev. B, 13-Oct-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
C/W
1
Si7356DP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
NO TAG
Drain-Source On-State Resistance
NO TAG
Forward Transconductance
NO TAG
Diode Forward Voltage
NO TAG
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 25 A
V
GS
= 4.5 V, I
D
= 19 A
V
DS
= 15 V, I
D
= 25 A
I
S
= 2.9 A, V
GS
= 0 V
30
0.0024
0.0032
110
0.72
1.1
0.003
0.004
1.0
3.0
"100
1
5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
NO TAG
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
45
20
16
1.1
27
21
107
43
45
40
35
160
65
70
ns
W
70
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60
50
40
30
20
10
Output Characteristics
V
GS
= 10 thru 4 V
60
50
40
30
20
Transfer Characteristics
I
D
- Drain Current (A)
I
D
- Drain Current (A)
T
C
= 125_C
10
25_C
- 55_C
3V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72222
S-32039—Rev. B, 13-Oct-03
2
Si7356DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.005
Vishay Siliconix
On-Resistance vs. Drain Current
8500
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.004
C - Capacitance (pF)
V
GS
= 4.5 V
0.003
V
GS
= 10 V
0.002
6800
C
iss
5100
3400
0.001
1700
C
rss
C
oss
0.000
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
6
V
GS
- Gate-to-Source Voltage (V)
5
4
3
2
1
0
0
10
20
V
DS
= 15 V
I
D
= 20 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 25 A
r
DS(on)
- On-Resistance (
W)
(Normalized)
1.4
1.2
1.0
0.8
30
40
50
60
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.015
On-Resistance vs. Gate-to-Source Voltage
I
S
- Source Current (A)
10
T
J
= 150_C
r
DS(on)
- On-Resistance (
W
)
0.012
I
D
= 25 A
0.009
1
T
J
= 25_C
0.006
0.003
0.1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
Document Number: 72222
S-32039—Rev. B, 13-Oct-03
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
www.vishay.com
3
Si7356DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50
40
Power (W)
120
I
D
= 250
mA
200
Single Pulse Power
160
80
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
- Temperature (_C)
100
Safe Operating Area, Junction-to-Case
Limited by r
DS(on)
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
T
C
= 25_C
Single Pulse
dc
0.01
10
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 50_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72222
S-32039—Rev. B, 13-Oct-03
Si7356DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72222
S-32039—Rev. B, 13-Oct-03
www.vishay.com
5
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