Specification Comparison
Vishay Siliconix
Si7336ADP vs. Si7336DP
Description: N-Channel MOSFET
Package:
PowerPAKr S0-8
Pin Out:
Identical
Part Number Replacements:
Si7336ADP-T1 Replaces Si7336DP-T1
Lead (Pb)-Free: Si7336ADP-T1—E3 Replaces Si7336DP-T1—E3
Summary of Performance:
The Si7336ADP is the recommended replacement for the original Si7336DP. The Si7336ADP has lower on-resistance,
otherwise, both part numbers perform identically.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_C
UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
Pulsed Drain Current
Continuous Source Current* (MOSFET Diode Conduction)
Avalanche Current
Power Dissipation
L = 1.0 mH
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
P
D
T
j
and T
stg
R
thJA
R
thJA
Si7336ADP
30
"20
18
15
70
1.8
50
1.9
1.2
−55
to 150
65
1.5
Si7336DP
30
"20
18
15
70
1.8
NS**
1.9
1.2
−55
to 150
65
1.5
Unit
V
A
W
_C
_C/W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient*
Maximum Junction-to-Case (Drain)*
Note: * Indicates Steady State, all others are independent of time.
** NS denotes parameter not specified in original data sheet.
SPECIFICATIONS (T
J
= 25
_C
UNLESS OTHERWISE NOTED)
Si7336ADP
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Drain Source On Resistance
Forward Transconductance
Diode Forward Voltage
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
30
0.0024
0.0031
110
0.72
1.1
0.0030
0.0040
1.0
3.0
"100
1
30
0.0026
0.0033
110
0.72
1.1
0.00325
0.0042
1.0
3.0
"100
1
V
nA
mA
A
W
S
V
Si7336DP
Max
Min
Typ
Max
Unit
Symbol
Min
Typ
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Document Number: 73260
05-Jan-05
Q
g
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
0.8
36
18
10
1.3
5600
860
415
2.0
0.8
50
36
18
10
1.3
5600
860
415
www.vishay.com
p
pF
2.0
W
50
nC
1
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