Si6968DQ
Vishay Siliconix
N-Channel 2.5-V (G-S) Battery Switch
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(ON)
(W)
0.022 @ V
GS
= 4.5 V
0.030 @ V
GS
= 2.5 V
I
D
(A)
"6.5
"5.5
D
D
TSSOP-8
D
S
1
S
1
G
1
1
2
3
4
Top View
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
D
8
D
S
2
S
2
G
2
G
1
G
2
Si6968DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
A, B
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
A, B
Maximum Power Dissipation
A, B
Dissi ation
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
LIMIT
20
"12
"6.4
"5.1
"30
1.5
1.5
0.96
–55 to 150
W
_C
A
V
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
A
Junction to Ambient
t
v
10 sec
Steady State
Notes
A. Surface Mounted on FR4 Board.
B. t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70757.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56943—Rev. E, 02-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
SYMBOL
R
thJA
R
thJA
85
TYPICAL
MAXIMUM
83
UNIT
_C/W
5-1
Si6968DQ
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
PARAMETER
STATIC
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
Drain-Source On-State
Drain Source On State Resistance
A
Forward Transconductance
A
Diode Forward Voltage
A
DYNAMIC
B
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.5 A, di/dt = 100 A/ms
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
V
DS
= 10 V, V
GS
= 10 V, I
D
= 6.5 A
16
3.4
4.0
20
48
90
55
40
40
80
180
110
70
ns
30
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70_C
V
DS
w
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 6.5 A
V
GS
= 2.5 V, I
D
= 5.5 A
V
DS
= 10 V, I
D
= 6.5 A
I
S
= 1.5 A, V
GS
= 0 V
30
0.017
0.022
30
0.66
1.2
0.022
0.030
W
S
V
0.6
"100
1
5
V
nA
mA
A
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Notes
A. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
B. Guaranteed by design, not subject to production testing.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56943—Rev. E, 02-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
5-2
Si6968DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
Output Characteristics
30
V
GS
= 5 thru 2.5 V
24
I
D
– Drain Current (A)
I
D
– Drain Current (A)
24
30
Transfer Characteristics
18
2V
18
12
12
T
C
= 125_C
6
25_C
0
–55_C
6
1.5 V
0
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On Resistance vs. Drain Current
0.04
3000
Capacitance
r
DS(on)
– On-Resistance (
W
)
2500
C – Capacitance (pF)
0.03
V
GS
= 2.5 V
V
GS
= 4.5 V
2000
C
iss
0.02
1500
1000
C
oss
500
C
rss
0.01
0
0
6
12
18
24
30
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
4.5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 6.5 A
Gate Charge
1.8
1.6
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.4
1.2
1.0
0.8
0.6
On Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 6.5 A
3.6
2.7
1.8
0.9
0
0
4
8
12
16
0.4
–50
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56943—Rev. E, 02-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
5-3
Si6968DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source Drain Diode Forward Voltage
20
0.08
On Resistance vs. Gate to Source Voltage
I
S
– Source Current (A)
T
J
= 150_C
r
DS(on)
– On-Resistance (
W
)
10
0.06
0.04
T
J
= 25_C
0.02
I
D
= 6.5 A
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
0.2
V
GS(th)
Variance (V)
30
25
Single Pulse Power
20
–0.0
Power (W)
15
–0.2
10
–0.4
5
–0.6
–50
0
0
50
T
J
– Temperature (_C)
100
150
0.01
0.1
Time (sec)
1
10
30
Normalized Thermal Transient Impedance, Junction to Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 85_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
100
600
Square Wave Pulse Duration (sec)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56943—Rev. E, 02-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
5-4
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