Si6956DQ
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.09 @ V
GS
= 10 V
0.175 @ V
GS
= 4.5 V
I
D
(A)
"2.5
"1.8
D
1
D
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
D
8
D
2
S
2
S
2
G
2
G
1
G
2
Si6956DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
P
D
T
J
, T
stg
Symbol
V
DS
V
GS
Limit
20
"20
"2.5
"2.0
"20
1.25
1.0
Unit
V
A
W
0.64
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70173
S-00652—Rev. E, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
Limit
125
Unit
_C/W
2-1
Si6956DQ
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain Source On State Resistance
a
Drain-Source On-State
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 4.5 V, I
D
= 1.8 A
V
DS
= 15 V, I
D
= 2.5 A
I
S
= 1.25 A, V
GS
= 0 V
14
0.065
0.100
5
0.8
1.2
0.09
0.175
W
S
V
1.0
"100
1
25
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.25 A, di/dt = 100 A/ms
V
DD
= 10 V, R
L
= 10
W
V,
I
D
^
1 A, V
GEN
= 10 V R
G
= 6
W
A
V,
V
DS
= 10 V, V
GS
= 10 V I
D
= 2.5 A
V
V,
25
7
0.9
2.1
11
11
16
6
45
20
20
30
15
70
ns
10
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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S
FaxBack 408-970-5600
2-2
Document Number: 70173
S-00652—Rev. E, 27-Mar-00
Si6956DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
6V
16
I
D
– Drain Current (A)
16
I
D
– Drain Current (A)
T
C
= –55_C
25_C
12
125_C
20
Transfer Characteristics
V
GS
= 10, 9 ,8 ,7 V
5V
12
8
4V
4
3V
0
0
1
2
3
4
5
8
4
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.30
1000
Capacitance
0.25
r
DS(on)
– On-Resistance (
Ω
)
C – Capacitance (pF)
V
GS
= 4.5 V
800
0.20
600
C
oss
400
C
iss
200
C
rss
0
0.15
0.10
V
GS
= 10 V
0.05
0
0
2
4
6
8
10
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
= 10 V
I
D
= 2.5 A
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.5 A
V
GS
– Gate-to-Source Voltage (V)
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
0
1
2
3
4
5
6
7
8
8
1.5
6
1.0
4
0.5
2
0
0
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
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FaxBack 408-970-5600
Document Number: 70173
S-00652—Rev. E, 27-Mar-00
2-3
Si6956DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
T
J
= 150_C
I
S
– Source Current (A)
10
r
DS(on)
– On-Resistance (
Ω
)
0.32
0.40
On-Resistance vs. Gate-to-Source Voltage
0.24
I
D
= 2.5 A
T
J
= 25_C
0.16
0.08
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.00
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
1.0
Threshold Voltage
120
Single Pulse Power
100
0.5
V
GS(th)
Variance (V)
80
0.0
Power (W)
I
D
= 250
µA
60
40
–0.5
20
–1.0
–50
0
–25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
–4
2. Per Unit Base = R
thJA
= 125_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
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S
FaxBack 408-970-5600
2-4
Document Number: 70173
S-00652—Rev. E, 27-Mar-00
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