Si6926ADQ
New Product
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.030 @ V
GS
= 4.5 V
20
0.033 @ V
GS
= 3.0 V
0.035 @ V
GS
= 2.5 V
0.043 @ V
GS
= 1.8 V
I
D
(A)
4.5
4.2
3.9
3.6
D
1
D
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
S
1
Ordering Information: Si6926ADQ-T1—E3 (Lead Free)
N-Channel MOSFET
S
2
N-Channel MOSFET
D
8 D
2
7 S
2
6 S
2
5 G
2
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
20
"8
4.5
3.6
20
0.83
1.0
0.64
Steady State
Unit
V
4.1
3.3
A
0.69
0.83
0.53
−55
to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72754
S-40230—Rev. A, 16-Feb-04
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
90
126
65
Maximum
125
150
80
Unit
_C/W
C/W
1
Si6926ADQ
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 5 V
V
GS
= 4.5 V, I
D
= 4.5 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 3.0 V, I
D
= 4.2 A
V
GS
= 2.5 V, I
D
= 3.9 A
V
GS
= 1.8 V, I
D
= 3.6 A
Forward Transconductance
b
Diode Forward Voltage
b
g
fs
V
SD
V
DS
= 10 V, I
D
= 4.5 A
I
S
= 0.83 A, V
GS
= 0 V
10
0.024
0.026
0.029
0.035
26
0.6
1.1
0.030
0.033
0.035
0.043
S
V
W
0.40
1.0
"100
1
5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 0.83 A, di/dt = 100 A/ms
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 10 V, R
g
= 6
W
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 4.5 A
7.5
1.2
1.2
1.9
6
16
46
9
20
12
25
70
15
40
ns
W
10.5
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 5 thru 2 V
16
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
16
20
Transfer Characteristics
12
1.5 V
12
8
8
T
C
= 125_C
4
25_C
−55_C
1.00
1.25
1.50
1.75
2.00
4
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
0
0.00
0.25
0.50
0.75
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72754
S-40230—Rev. A, 16-Feb-04
2
Si6926ADQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
r
DS(on)
−
On-Resistance (
W
)
1200
1000
V
GS
= 2.5 V
0.03
V
GS
= 3.0 V
C
−
Capacitance (pF)
800
600
400
200
0
4.0
8.0
12.0
16.0
20.0
0
C
rss
4
8
12
16
20
C
oss
Vishay Siliconix
Capacitance
0.04
C
iss
0.02
V
GS
= 4.5 V
0.01
0.00
0.0
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
6
V
GS
−
Gate-to-Source Voltage (V)
5
4
3
2
1
0
0
2
4
6
8
10
Q
g
−
Total Gate Charge (nC)
V
DS
= 10 V
I
D
= 4.5 A
1.4
r
DS(on)
−
On-Resiistance
(Normalized)
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 4.5 A
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20
0.08
0.07
r
DS(on)
−
On-Resistance (
W
)
I
S
−
Source Current (A)
T
J
= 150_C
10
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 4.5 A
T
J
= 25_C
1
0.0
1
2
3
4
5
6
7
8
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72754
S-40230—Rev. A, 16-Feb-04
www.vishay.com
3
Si6926ADQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.2
0.1
V
GS(th)
Variance (V)
I
D
= 250
mA
−0.0
Power (W)
−0.1
−0.2
−0.3
−0.4
−50
20
15
10
5
30
25
Single Pulse Power, Junction-to-Ambient
−25
0
25
50
75
100
125
150
0
10
−3
10
−2
10
−1
1
10
100
600
T
J
−
Temperature (_C)
Time (sec)
100
Safe Operating Area, Junction-to-Case
Limited
by r
DS(on)
I
DM
Limited
10
I
D
−
Drain Current (A)
1 ms
1
I
D(on)
Limited
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
1
10
10 ms
100 ms
1s
10 s
dc
100
0.01
0.1
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 126_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
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4
Document Number: 72754
S-40230—Rev. A, 16-Feb-04
Si6926ADQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10
−4
Single Pulse
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72754
S-40230—Rev. A, 16-Feb-04
www.vishay.com
5
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