Si6926ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
8 D
2
7 S
2
6 S
2
5 G
2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
G
1
G
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.83
1.0
0.64
- 55 to 150
4.5
3.6
20
0.69
0.83
0.53
W
°C
10 s
20
±8
4.1
3.3
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board, t
≤
10 s.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72754
S-81056-Rev. B, 12-May-08
www.vishay.com
1
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
90
126
65
Maximum
125
150
80
°C/W
Unit
Si6926ADQ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 5 V
V
GS
=
4.5 V, I
D
= 4.5 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 3.0 V, I
D
= 4.2 A
V
GS
= 2.5 V, I
D
= 3.9 A
V
GS
= 1.8 V, I
D
= 3.6 A
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 0.83 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 4.5 A
7.5
1.2
1.2
1.9
6
16
46
9
20
12
25
70
15
40
ns
Ω
10.5
nC
g
fs
V
SD
V
DS
= 10 V, I
D
= 4.5 A
I
S
= 0.83 A, V
GS
= 0 V
10
0.024
0.026
0.029
0.035
26
0.6
1.1
0.030
0.033
0.035
0.043
S
V
Ω
0.40
1.0
± 100
1
5
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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