Si6911DQ
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.026 @ V
GS
= -4.5 V
-12
0.035 @ V
GS
= -2.5 V
0.046 @ V
GS
= -1.8 V
D
TrenchFETr Power MOSFETS
I
D
(A)
-5.1
-4.5
-3.9
APPLICATIONS
D
Load Switch
D
Battery Switch
S
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
Ordering Information: Si6911DQ T-1
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
D
8 D
2
7 S
2
6 S
2
5 G
2
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
-12
"8
-5.1
Steady State
Unit
V
-4.3
-3.5
-30
A
-0.7
0.83
0.53
-55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
-4.1
-1.0
1.14
0.73
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
86
124
59
Maximum
110
150
75
Unit
_C/W
C/W
1
Si6911DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= -300
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= -9.6 V, V
GS
= 0 V
V
DS
= -9.6 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= -5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -5.1 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -4.5 A
V
GS
= -1.8 V, I
D
= -3.9 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= -5 V, I
D
= -5.1 A
I
S
= -1.0 A, V
GS
= 0 V
-20
0.021
0.028
0.037
20
-0.65
-1.1
0.026
0.035
0.046
W
W
S
V
-0.4
-0.9
"100
-1
-25
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= -1.0 A, di/dt = 100 A/ms
V
DD
= -6 V, R
L
= 6
W
I
D
^
-1 A, V
GEN
= -4.5 V, R
G
= 6
W
V
DS
= -6 V, V
GS
= -4.5 V, I
D
= -5.1 A
16
1.9
3.9
35
62
120
70
65
55
100
180
110
100
ns
24
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 2.5 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
2V
18
24
30
T
C
= -55_C
25_C
Transfer Characteristics
18
125_C
12
12
6
1.5 V
6
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72231
S-31064—Rev. A, 26-May-03
2
Si6911DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
r
DS(on)
- On-Resistance (
W
)
2500
Vishay Siliconix
Capacitance
C - Capacitance (pF)
0.08
2000
C
iss
1500
0.06
V
GS
= 1.8 V
0.04
V
GS
= 2.5 V
1000
C
oss
500
0.02
V
GS
= 4.5 V
0.00
0
6
12
18
24
30
C
rss
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
6
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 5.1 A
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 5.1 A
1.4
4
r
DS(on)
- On-Resistance (
W)
(Normalized)
8
12
16
20
5
1.2
3
1.0
2
1
0.8
0
0
4
Q
g
- Total Gate Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40
T
J
= 150_C
0.10
On-Resistance vs. Gate-to-Source Voltage
I
S
- Source Current (A)
10
r
DS(on)
- On-Resistance (
W
)
0.08
0.06
I
D
= 5.1 A
1
T
J
= 25_C
0.04
0.02
0.2
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
3
Si6911DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
Single Pulse Power, Junction-to-Ambient
0.3
V
GS(th)
Variance (V)
160
I
D
= 300
mA
0.2
Power (W)
120
0.1
80
0.0
40
-0.1
-0.2
-50
-25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Case
100
10
I
D
- Drain Current (A)
Limited
by r
DS(on)
1 ms
10 ms
1
100 ms
0.1
T
C
= 25_C
Single Pulse
1s
10 s
dc
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 124_C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72231
S-31064—Rev. A, 26-May-03
Si6911DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
5
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