Si6874EDQ
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.026 @ V
GS
= 4.5 V
20
0.031 @ V
GS
= 2.5 V
0.039 @ V
GS
= 1.8 V
I
D
(A)
6.5
5.8
5.0
D
D
TSSOP-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
N-Channel
S
1
N-Channel
S
2
D
8
D
D
D
D
G
1
2.4 kW
G
2
2.4 kW
Si6874EDQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
20
"12
6.5
4.7
30
1.50
1.67
1.06
Steady State
Unit
V
5.3
4.2
A
1.10
1.20
0.76
–55 to 150
_C
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
www.vishay.com
S
FaxBack 408-970-5600
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
60
86
38
Maximum
75
105
45
Unit
_C/W
1
Si6874EDQ
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"4.5
V
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 6.5 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= 2.5 V, I
D
= 5.8 A
V
GS
= 1.8 V, I
D
= 5.0 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= 10 V, I
D
= 6.5 A
I
S
= 1.5 A, V
GS
= 0 V
20
0.021
0.025
0.031
25
0.65
1.1
0.026
0.031
0.039
S
V
W
0.40
"1
"10
1
20
V
mA
mA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 10
W
V,
I
D
^
1 A, V
GEN
= 4 5 V R
G
= 6
W
A
4.5 V,
V
DS
= 10 V, V
GS
= 4 5 V I
D
= 6.5 A
V
4.5 V,
65
12.5
2.7
2.7
0.7
1.3
5.5
4.6
1.0
2.0
8.0
7.0
ms
18
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate Current vs. Gate Source Voltage
8
10,000
Gate Current vs. Gate Source Voltage
1,000
I
GSS
– Gate Current (mA)
6
I
GSS
– Gate Current (
mA)
100
T
J
= 150_C
4
10
1
0.1
T
J
= 25_C
2
0
0
3
6
9
12
15
18
0.01
0
3
6
9
12
15
V
GS
– Gate-to-Source Voltage (V)
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S
FaxBack 408-970-5600
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
2
Si6874EDQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 2 V
24
I
D
– Drain Current (A)
I
D
– Drain Current (A)
24
25_C
18
18
125_C
12
30
T
C
= –55_C
Vishay Siliconix
Transfer Characteristics
12
1.5 V
6
6
0
0
2
4
6
8
10
12
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On Resistance vs. Drain Current
0.06
2500
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.05
C – Capacitance (pF)
2000
C
iss
1500
0.04
V
GS
= 1.8 V
0.03
V
GS
= 2.5 V
V
GS
= 4.5 V
0.02
1000
C
oss
0.01
500
C
rss
0
4
8
12
16
20
0
0
6
12
18
24
30
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 6.5 A
Gate Charge
1.8
On Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 6.5 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
6
9
12
15
4
1.6
1.4
3
1.2
2
1.0
1
0.8
0
0
3
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
www.vishay.com
S
FaxBack 408-970-5600
3
Si6874EDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source Drain Diode Forward Voltage
20
0.08
On Resistance vs. Gate to Source Voltage
r
DS(on)
– On-Resistance (
W
)
10
I
S
– Source Current (A)
T
J
= 150_C
0.06
I
D
= 6.5 A
0.04
T
J
= 25_C
0.02
1
0
0.4
0.6
0.8
1.0
1.2
0
0
1
2
3
4
5
6
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
0.2
24
V
GS(th)
Variance (V)
–0.0
Power (W)
32
Single Pulse Power, Junction-to-Ambient
16
–0.2
8
–0.4
–0.6
–50
–25
0
25
50
75
100
125
150
0
10
–2
10
–1
1
Time (sec)
10
100
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 86_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
S
FaxBack 408-970-5600
4
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
Si6874EDQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
www.vishay.com
S
FaxBack 408-970-5600
5
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