Si6821DQ
New Product
Vishay Siliconix
P-Channel, Reduced Q
g
, MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
–20
r
DS(on)
(W)
0.190 @ V
GS
= –4.5 V
0.280 @ V
GS
= –3.0 V
I
D
(A)
"1.7
"1.3
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
20
V
F
(V)
Diode Forward Voltage
0.5 V @ 1 A
I
F
(A)
1.5
S
K
TSSOP-8
D
S
S
G
1
2
3
4
Top View
D
8
K
A
A
A
D
A
G
Si6821DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
J
= 150_C) (MOSFET)
a, b
150 C)
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
a, b
Maximum Power Dissipation (Schottky)
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
T
J
, T
stg
P
D
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
KA
V
GS
I
D
I
DM
I
S
I
F
I
FM
Limit
–20
20
"12
"1.7
"1.3
"8
–1.0
1.5
30
1.2
0.76
1.0
0.64
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t
v
10 sec)
a
Device
MOSFET
Schottky
MOSFET
Schottky
Symbol
Typical
Maximum
105
125
Unit
R
thJA
Maximum Junction-to-Ambient (t = steady state)
a
115
130
_C/W
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
Document Number: 70791
S-56954—Rev. C, 01-Mar-99
www.vishay.com
S
FaxBack 408-970-5600
2-1
Si6821DQ
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= –20 V, V
GS
= 0 V
V
DS
= –20 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
–5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –1.7 A
V
GS
= –3.0 V, I
D
= –1.3 A
V
DS
= –10 V, I
D
= –1.7 A
I
S
= –1 A, V
GS
= 0 V
–6
0.135
0.200
4.0
–0.77
–1.2
0.190
0.280
W
S
V
–0.6
"100
–1
–25
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1 A, di/dt = 100 A/ms
V
DD
= –3.5 V, R
L
= 11.5
W
3 5 V,
11 5
I
D
^
–1 A, V
GEN
= –4.5 V R
G
= 6
W
1A
4 5 V,
V
DS
= –3.5 V, V
GS
= –4.5 V I
D
= –0.3 A
35V
4 5 V,
03
3.5
0.85
0.60
7
10
11
7
35
15
20
20
15
60
ns
7.0
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
V
F
Test Condition
I
F
= 1 A
I
F
= 1 A, T
J
= 125_C
V
r
= 20 V
Min
Typ
0.45
0.36
0.003
0.1
2
62
Max
0.5
Unit
V
0.42
0.100
1
10
pF
mA
A
Maximum R
Reverse Leakage Current
M i
L k
C
I
rm
V
r
= 20 V, T
J
= 75_C
V
r
= 20 V, T
J
= 125_C
Junction Capacitance
C
T
V
r
= 10 V
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70791
S-56954—Rev. C, 01-Mar-99
Si6821DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
4.5 V
8
I
D
– Drain Current (A)
I
D
– Drain Current (A)
4V
3.5 V
8
25_C
125_C
10
T
C
= –55_C
Vishay Siliconix
MOSFET
Transfer Characteristics
6
3V
4
2.5 V
2
1.5 V
0
0
2
4
6
8
2V
6
4
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5
600
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.4
C – Capacitance (pF)
500
C
iss
400
0.3
V
GS
= 3.0 V
0.2
V
GS
= 4.5 V
0.1
300
C
oss
200
C
rss
100
0
0
2
4
I
D
– Drain Current (A)
6
8
0
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 3.5 V
I
D
= 0.3 A
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 1.7 A
4
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.5
2.0
2.5
3.0
3.5
4.0
1.6
3
1.2
2
0.8
1
0
0
0.5
1.0
0.4
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
Document Number: 70791
S-56954—Rev. C, 01-Mar-99
T
J
– Junction Temperature (_C)
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si6821DQ
Vishay Siliconix
New Product
MOSFET
On-Resistance vs. Gate-to-Source Voltage
0.8
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
r
DS(on)
– On-Resistance (
W
)
I
S
– Source Current (A)
0.6
T
J
= 150_C
0.4
I
D
= 1.7 A
0.2
T
J
= 25_C
1
0.2
0.4
0.6
0.8
1.0
1.8
0
0
1
2
3
4
5
6
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.50
I
D
= 250
mA
0.25
V
GS(th)
Variance (V)
20
Power (W)
30
25
Single Pulse Power
0.00
15
10
–0.25
5
–0.5
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
Time (sec)
1
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 115_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70791
S-56954—Rev. C, 01-Mar-99
Si6821DQ
New Product
Vishay Siliconix
SCHOTTKY
Forward Voltage Drop
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
10
I
R
– Reverse Current (mA)
I
F
– Forward Current (A)
1
1
T
J
= 150_C
0.1
20 V
10 V
0.01
0.1
T
J
= 25_C
0.001
0.0001
0
25
50
75
100
125
150
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
T
J
– Junction Temperature (_C)
V
F
– Forward Voltage Drop (V)
250
Capacitance
C
T
– Junction Capacitance (pF)
200
150
C
iss
100
50
0
0
4
8
12
16
20
V
KA
– Reverse Voltage (V
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
30
Square Wave Pulse Duration (sec)
Document Number: 70791
S-56954—Rev. C, 01-Mar-99
www.vishay.com
S
FaxBack 408-970-5600
2-5
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
