Si6459BDQ
New Product
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
−60
60
FEATURES
I
D
(A)
−2.7
−2.4
r
DS(on)
(W)
0.115 @ V
GS
=
−10
V
0.150 @ V
GS
=
−4.5
V
D
TrenchFETr Power MOSFET
S*
TSSOP-8
D
S
S
G
1
2
3
4
Top View
Ordering Information: Si6459BDQ-T1
D
P-Channel MOSFET
D
8 D
7 S
6 S
5 D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
10 secs
−60
"20
−2.7
−2.2
−20
−1.25
15
11
1.50
1.0
Steady State
Unit
V
−2.2
−1.8
A
−0.83
mJ
1.0
0.67
W
_C
−55
to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
66
100
50
Maximum
83
120
60
Unit
_C/W
C/W
1
Si6459BDQ
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
=
−60
V, V
GS
= 0 V
V
DS
=
−60
V, V
GS
= 0 V, T
J
= 70_C
V
DS
=
−5
V, V
GS
=
−10
V
V
GS
=
−10
V, I
D
=
−2.7
A
V
GS
=
−4.5
V, I
D
=
−2.4
A
V
DS
=
−15
V, I
D
=
−2.7
A
I
S
=
−1.25
A, V
GS
= 0 V
−20
0.092
0.120
8
−0.8
−1.2
0.115
0.150
W
S
V
−1
−3
"100
−1
−10
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
=
−1.25
A, di/dt = 100 A/ms
V
DD
=
−30
V, R
L
= 30
W
I
D
^
−1
A, V
GEN
=
−10
V, R
G
= 6
W
V
DS
=
−30
V, V
GS
=
−10
V, I
D
=
−2.7
A
14.5
2.2
3.7
14
10
15
50
35
30
15
22
75
55
50
ns
W
22
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 thru 5 V
16
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
16
20
Transfer Characteristics
12
4V
12
8
8
T
C
= 125_C
25_C
0
−55_C
0
1
2
3
4
5
4
3V
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
4
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
www.vishay.com
2
Si6459BDQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30
r
DS(on)
−
On-Resistance (
W
)
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
20
V
GS
= 4.5 V
V
GS
= 10 V
C
−
Capacitance (pF)
1000
Vishay Siliconix
Capacitance
800
C
iss
600
400
200
C
oss
C
rss
0
10
20
30
40
50
60
0
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 30 V
I
D
= 2.7 A
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.7 A
6
4
2
0
0
3
6
9
12
15
Q
g
−
Total Gate Charge (nC)
r
DS(on)
−
On-Resistance (
W)
(Normalized)
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20
T
J
= 150_C
I
S
−
Source Current (A)
10
r
DS(on)
−
On-Resistance (
W
)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 2.7 A
T
J
= 25_C
1
0.0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
www.vishay.com
3
Si6459BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
50
Single Pulse Power
0.4
V
GS(th)
Variance (V)
I
D
= 250
mA
40
Power (W)
0.2
30
0.0
20
−0.2
10
−0.4
−50
−25
0
25
50
75
100
125
150
0
10
−3
10
−2
10
−1
1
10
100
600
T
J
−
Temperature (_C)
Time (sec)
100
Safe Operating Area, Junction-to-Case
Limited
by r
DS(on)
I
DM
Limited
10
I
D
−
Drain Current (A)
P(t) = 0.0001
1
I
D(on)
Limited
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
1
10
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
0.01
0.1
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
Si6459BDQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
www.vishay.com
5
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