Si6443DQ
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
-30
D
TrenchFETr Power MOSFET
I
D
(A)
-8.8
- 7.0
r
DS(on)
(W)
0.012 @ V
GS
= -10 V
0.019 @ V
GS
= -4.5 V
APPLICATIONS
D
Battery Switch
D
Load Switch
S*
TSSOP-8
D
S
S
G
1
2
3
4
Top View
D
P-Channel MOSFET
D
8 D
7 S
6 S
5 D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
Si6443DQ
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
-30
"20
- 8.8
Steady State
Unit
V
-7.3
-5.9
-30
A
-0.95
1.05
0.67
-55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
-7.2
-1.35
1.50
1.0
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72083
S-22385—Rev. A, 30-Dec-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
60
100
35
Maximum
83
120
45
Unit
_C/W
C/W
1
Si6443DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= -250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= -24 V, V
GS
= 0 V
V
DS
= -24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
-5 V, V
GS
= -10 V
V
GS
= -10 V, I
D
= -8.8 A
V
GS
= -4.5 V, I
D
= -7.2 A
V
DS
= -15 V, I
D
= -8.8 A
I
S
= -1.5 A, V
GS
= 0 V
-20
0.0095
0.0145
30
-0.71
-1.1
0.012
0.019
W
S
V
-1
-3
"100
-1
-10
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= -1.5 A, di/dt = 100 A/ms
V
DD
= -15 V, R
L
= 15
W
I
D
^
-1 A, V
GEN
= -10 V, R
G
= 6
W
V
DS
= -15 V, V
GS
= -5 V, I
D
= -8.8 A
38
9.3
17.7
25
21
115
68
65
40
35
180
110
100
ns
60
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10 thru 4 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
30
Transfer Characteristics
18
18
12
3V
12
T
C
= 125_C
6
25_C
-55
_C
2.5
3.0
3.5
6
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72083
S-22385—Rev. A, 30-Dec-02
2
Si6443DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.025
r
DS(on)
- On-Resistance (
W
)
5000
Vishay Siliconix
Capacitance
C - Capacitance (pF)
0.020
V
GS
= 4.5 V
0.015
V
GS
= 10 V
0.010
4000
C
iss
3000
2000
C
oss
0.005
1000
C
rss
0.000
0
6
12
18
24
30
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 8.8 A
8
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 8.8 A
1.4
6
r
DS(on)
- On-Resistance (
W)
(Normalized)
28
42
56
70
1.2
4
1.0
2
0.8
0
0
14
Q
g
- Total Gate Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
T
J
= 150_C
r
DS(on)
- On-Resistance (
W
)
10
I
S
- Source Current (A)
0.064
0.080
On-Resistance vs. Gate-to-Source Voltage
0.048
I
D
= 8.8 A
1
T
J
= 25_C
0.032
0.016
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72083
S-22385—Rev. A, 30-Dec-02
www.vishay.com
3
Si6443DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
60
Single Pulse Power, Junction-to-Ambient
0.6
V
GS(th)
Variance (V)
50
0.4
Power (W)
I
D
= 250
mA
40
0.2
30
0.0
20
-0.2
10
-0.4
-50
-25
0
25
50
75
100
125
150
0
10
- 2
10
- 1
1
Time (sec)
10
100
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Case
100
Limited
by r
DS(on)
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
0.1
1s
10 s
dc
0.01
0.1
1
10
100
T
C
= 25_C
Single Pulse
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100_C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72083
S-22385—Rev. A, 30-Dec-02
Si6443DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72083
S-22385—Rev. A, 30-Dec-02
www.vishay.com
5
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