Si6404DQ
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.009 @ V
GS
= 10 V
30
0.010 @ V
GS
= 4.5 V
0.014 @ V
GS
= 2.5 V
FEATURES
I
D
(A)
11
10
8.8
D
TrenchFETr Power MOSFETS: 2.5-V Rated
D
30-V V
DS
APPLICATIONS
D
Battery Switch
D
Charger Switch
D
TSSOP-8
D
S
S
G
1
2
3
4
Top View
S*
N-Channel MOSFET
D
8 D
7 S
6 S
5 D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
Si6404DQ
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
30
"12
11
Steady State
Unit
V
8.6
6.9
30
A
0.95
1.08
0.69
–55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
8.9
1.5
1.75
1.14
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71440
S-03483—Rev. A, 16-Apr-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
55
95
35
Maximum
70
115
45
Unit
_C/W
C/W
1
Si6404DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 11 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 2.5 V, I
D
= 8.8 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= 10 V, I
D
= 11 A
I
S
= 1.5 A, V
GS
= 0 V
20
0.0073
0.0084
0.0116
27
0.72
1.1
0.009
0.010
0.014
W
W
S
V
0.6
"100
1
10
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.5 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 11 A
32
8.1
10
7.5
35
35
100
50
40
55
55
150
75
85
ns
W
48
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10 thru 3 V
24
I
D
– Drain Current (A)
I
D
– Drain Current (A)
24
30
Transfer Characteristics
18
2V
12
18
12
T
C
= 125_C
6
25_C
–55_C
1.5
2.0
2.5
6
0
0
2
4
6
8
10
0
0.0
0.5
1.0
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71440
S-03483—Rev. A, 16-Apr-01
2
Si6404DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.015
r
DS(on)
– On-Resistance (
W
)
V
GS
= 2.5 V
C – Capacitance (pF)
6000
Vishay Siliconix
Capacitance
0.012
5000
4000
C
iss
0.009
V
GS
= 4.5 V
3000
0.006
V
GS
= 10 V
2000
C
oss
C
rss
0
6
12
18
24
30
0.003
1000
0.000
0
6
12
18
24
30
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 11 A
8
1.8
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 11 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
15
30
45
60
75
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.05
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 150_C
10
r
DS(on)
– On-Resistance (
W
)
0.04
0.03
I
D
= 11 A
0.02
T
J
= 25_C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71440
S-03483—Rev. A, 16-Apr-01
www.vishay.com
3
Si6404DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
60
Single Pulse Power, Junction-to-Ambient
0.2
I
D
= 250
mA
V
GS(th)
Variance (V)
–0.0
Power (W)
50
40
–0.2
30
–0.4
20
–0.6
10
–0.8
–50
–25
0
25
50
75
100
125
150
0
10
–2
10
–1
1
Time (sec)
10
100
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 95_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
4
Document Number: 71440
S-03483—Rev. A, 16-Apr-01
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
