). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 73463
S-81449-Rev. B, 23-Jun-08
www.vishay.com
1
Si5938DU
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1.2 A, V
GS
= 0 V
0.8
45
21
29
16
T
C
= 25 °C
14.8
20
1.2
70
32
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 2.8
Ω
I
D
≅
3.6 A, V
GEN
= 8 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 2.8
Ω
I
D
≅
3.6 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 10 V, V
GS
= 8 V, I
D
= 4.4 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 4.4 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
520
100
60
10.5
6
0.91
0.7
1.9
20
65
40
10
5
12
26
8
30
100
60
15
10
20
40
15
ns
Ω
16
9
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 4.4 A
V
GS
= 2.5 V, I
D
= 4.1 A
V
GS
= 1.8 V, I
D
= 1.8 A
V
DS
= 10 V, I
D
= 4.4 A
- 20
0.032
0.037
0.0455
22
0.039
0.045
0.055
S
Ω
0.4
20
17.4
- 2.6
1.0
± 100
-1
- 10
V
mV/°C
V
ns
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73463
S-81449-Rev. B, 23-Jun-08
Si5938DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
20
V
GS
= 3 V thru 5 V
16
I
D
- Drain Current (A)
25 °C, unless otherwise noted
10
V
GS
= 2.5 V
V
GS
= 2 V
V
GS
= 1.5 V
I
D
- Drain Current (A)
8
12
6
8
4
T
C
= 125 °C
2
25 °C
- 55 °C
0.3
0.6
0.9
1.2
1.5
4
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.08
0.07
R
DS(on)
- On-Resistance (mΩ)
0.06
C - Capacitance (pF)
0.05
V
GS
= 2.5 V
0.04
0.03
0.02
0.01
0.00
0
4
8
12
16
20
0
0
C
rss
4
V
GS
= 1.8 V
V
GS
= 4.5 V
600
800
Transfer Characteristics
C
iss
400
200
C
oss
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8
I
D
= 4.4 A
1.4
V
DS
= 10 V
R
DS(on)
- On-Resistance
(Normalized)
6
1.6
V
GS
= 4.5 V
I
D
= 4.4 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
1.2
4
V
DS
= 16 V
2
1.0
0.8
0
0
3
6
9
12
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73463
S-81449-Rev. B, 23-Jun-08
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si5938DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
20
T
J
= 150 °C
10
I
S
- Source Current (A)
0.08
I
D
= 4.4 A
0.07
0.06
125 °C
0.05
T
J
= 25 °C
0.04
25 °C
1
0.0
0.03
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.9
0.8
0.7
V
GS(th)
(V)
0.6
0.5
0.4
0.3
0.2
- 50
I
D
= 250 µA
Power (W)
30
40
On-Resistance vs. Gate-to-Source Voltage
20
10
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
I
limited
10
D(on)
I
D
- Drain Current (A)
I
DM
limited
Single Pulse Power, Junction-to-Ambient
100 µs
1 ms
1
10 ms
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
BVDSS limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
10 s
DC
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73463
S-81449-Rev. B, 23-Jun-08
Si5938DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
10
12
Power Dissipation (W)
I
D
- Drain Current (A)
8
9
Package Limited
6
6
4
3
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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