Si4953DY
Vishay Siliconix
Dual P-Channel 30-V(D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
FEATURES
D
100% R
g
Tested
I
D
(A)
- 4.9
- 3.6
r
DS(on)
(W)
0.053 @ V
GS
= - 10 V
0.095 @ V
GS
= - 4.5 V
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
D
1
Ordering Information: Si4953DY
Si4953DY-T1 (with Tape and Reel)
D
1
D
2
D
2
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
Symbol
V
DS
V
GS
Limit
- 30
"20
- 4.9
- 3.9
- 30
- 1.7
2.0
1.3
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com
Document Number: 70153
S-31726—Rev. E, 18-Aug-03
www.vishay.com
Symbol
R
thJA
Limit
62.5
Unit
_C/W
1
Si4953DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State
Drain Source On State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
v
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 4.9 A
V
GS
= - 4.5 V, I
D
= - 3.6 A
V
DS
= - 15 V, I
D
= - 4.9 A
I
S
= - 1.7 A, V
GS
= 0 V
- 20
0.043
0.070
10
0.8
- 1.2
0.053
0.095
-1
"100
-1
- 25
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.7 A, di/dt = 100 A/ms
V
DD
= - 15 V, R
L
= 15
W
I
D
^
- 1 A, V
GEN
= - 10 V, R
G
= 6
W
2
9
13
25
15
60
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 4.9 A
16
5
2
7.1
15
20
40
25
90
ns
W
25
nC
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
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FaxBack 408-970-5600
2
Document Number: 70153
S-31726—Rev. E, 18-Aug-03
Si4953DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10, 9, 8, 7, 6 V
24
I
D
- Drain Current (A)
5V
I
D
- Drain Current (A)
24
30
T
C
= - 55_C
Transfer Characteristics
25_C
125_C
18
18
12
4V
12
6
2, 1 V
0
0.0
3V
6
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
1500
Capacitance
r
DS(on)
- On-Resistance (
Ω
)
0.16
C - Capacitance (pF)
1200
C
iss
0.12
V
GS
= 4.5 V
900
0.08
V
GS
= 10 V
600
C
oss
0.04
300
C
rss
0.00
0
6
12
18
24
30
I
D
- Drain Current (A)
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
DS
= 15 V
I
D
= 4.9 A
1.75
On-Resistance vs. Junction Temperature
V
GS
- Gate-to-Source Voltage (V)
6
r
DS(on)
- On-Resistance (
Ω
)
(Normalized)
8
1.50
V
GS
= 10 V
I
D
= 4.9 A
1.25
4
1.00
2
0.75
0
0
4
8
12
16
20
0.50
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 70153
S-31726—Rev. E, 18-Aug-03
www.vishay.com
3
Si4953DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
0.75
On-Resistance vs. Gate-to-Source Voltage
10
I
S
- Source Current (A)
T
J
= 150_C
r
DS(on)
- On-Resistance (
Ω
)
0.60
0.45
I
D
= 4.9 A
T
J
= 25_C
0.30
0.15
1
0.3
0.5
0.7
0.9
1.1
1.3
0.00
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.7
50
Single Pulse Power
0.5
V
GS(th)
Variance (V)
I
D
= 250
µA
Power (W)
0.3
40
30
0.1
20
- 0.1
10
- 0.3
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.10
1.00
Time (sec)
10.00
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
2. Per Unit Base = R
thJA
= 62.5_C/W
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
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S
FaxBack 408-970-5600
4
Document Number: 70153
S-31726—Rev. E, 18-Aug-03
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