Si4944DY
New Product
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
12.2
9.4
r
DS(on)
(W)
0.0095 @ V
GS
= 10 V
0.016 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Conversion
D
Load Switching
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
G
1
D
1
D
2
G
2
S
1
Ordering Information: Si4944DY
Si4944DY-T1 (with Tape and Reel)
N-Channel MOSFET
S
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
30
"20
12.2
8.8
30
1.9
2.3
1.2
Steady State
Unit
V
9.3
6.7
A
1.1
1.3
0.7
−55
to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72512
S-32131—Rev. A, 27-Oct-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
42
75
19
Maximum
55
95
25
Unit
_C/W
C/W
1
Si4944DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12.2 A
V
GS
= 4.5 V, I
D
= 9.4 A
V
DS
= 10 V, I
D
= 12.2 A
I
S
= 1.9 A, V
GS
= 0 V
30
0.0075
0.013
32
0.8
1.2
0.0095
0.016
1
3
"100
1
5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.9 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
f = 1 MHz
0.5
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 12.2 A
13.5
7.1
4.7
1.0
10
10
40
12
45
1.7
15
15
60
20
70
ns
W
21
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10 thru 5 V
24
I
D
−
Drain Current (A)
4V
I
D
−
Drain Current (A)
24
30
Transfer Characteristics
18
18
12
12
T
C
= 125_C
6
25_C
0
0.0
−55_C
3.0
3.5
4.0
4.5
6
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72512
S-32131—Rev. A, 27-Oct-03
2
Si4944DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030
r
DS(on)
−
On-Resistance (
W
)
2400
C
iss
C
−
Capacitance (pF)
0.024
1800
Vishay Siliconix
Capacitance
0.018
V
GS
= 4.5 V
1200
0.012
V
GS
= 10 V
0.006
600
C
rss
0
0
6
12
18
24
30
0
6
12
C
oss
0.000
18
24
30
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 12.2 A
8
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 12.2 A
1.4
6
r
DS(on)
−
On-Resistance (
W)
(Normalized)
10
15
20
25
30
1.2
4
1.0
2
0.8
0
0
5
Q
g
−
Total Gate Charge (nC)
0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.06
0.05
On-Resistance vs. Gate-to-Source Voltage
I
S
−
Source Current (A)
T
J
= 150_C
10
r
DS(on)
−
On-Resistance (
W
)
I
D
= 12.2 A
0.04
I
D
= 3 A
0.03
0.02
0.01
0.00
T
J
= 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72512
S-32131—Rev. A, 27-Oct-03
www.vishay.com
3
Si4944DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
−0.0
−0.2
−0.4
−0.6
10
−0.8
−1.0
−50
0
0.01
I
D
= 250
mA
Power (W)
30
50
Single Pulse Power
40
20
−25
0
25
50
75
100
125
150
0.1
1
Time (sec)
10
100
600
T
J
−
Temperature (_C)
100
r
DS(on)
Limited
Safe Operating Area
I
DM
Limited
10
I
D
−
Drain Current (A)
I
D(on)
Limited
1
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
P(t) = 1
P(t) = 10
dc
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72512
S-32131—Rev. A, 27-Oct-03
Si4944DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72512
S-32131—Rev. A, 27-Oct-03
www.vishay.com
5
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