Si4933DY
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.014 @ V
GS
= -4.5 V
-12
0.017 @ V
GS
= -2.5 V
0.022 @ V
GS
= -1.8 V
FEATURES
I
D
(A)
-9.8
- 8.9
- 7.8
D
TrenchFETr Power MOSFET
D
Advanced High Cell Density Process
APPLICATIONS
D
Load Switching
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
-1.7
2.0
1.3
-55 to 150
-7.8
-30
-0.9
1.1
0.7
W
_C
-5.9
A
Symbol
V
DS
V
GS
10 secs
Steady State
-12
"8
Unit
V
- 9.8
-7.4
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 71980
S-22122—Rev. B, 25-Nov-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
45
85
26
Maximum
62.5
110
35
Unit
_C/W
C/W
1
Si4933DY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= -500
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= -9.6 V, V
GS
= 0 V
V
DS
= -9.6 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= -5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -9.8 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -8.9 A
V
GS
= -1.8 V, I
D
= -5.0 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= -10 V, I
D
= -9.8 A
I
S
= -1.7 A, V
GS
= 0 V
-30
0.0115
0.014
0.018
40
-0.7
-1.2
0.014
0.017
0.022
S
V
W
-0.40
-1.0
"100
-1
-5
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= -1.7 A, di/dt = 100 A/ms
V
DD
= 6 V, R
L
= 6
W
I
D
^
-1 A, V
GEN
= -4.5 V, R
G
= 6
W
V
DS
= 6 V, V
GS
= -4.5 V, I
D
= -9.8 A
46
6.0
13
35
47
320
260
210
55
70
480
390
315
ns
70
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 2 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
1.5 V
30
Transfer Characteristics
18
18
12
12
T
C
= 125_C
6
25_C
-55
_C
6
1V
0
0
1
2
3
4
5
0
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71980
S-22122—Rev. B, 25-Nov-02
www.vishay.com
2
Si4933DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030
r
DS(on)
- On-Resistance (
W
)
6000
Vishay Siliconix
Capacitance
0.025
C - Capacitance (pF)
5000
C
iss
0.020
V
GS
= 1.8 V
0.015
V
GS
= 2.5 V
4000
3000
0.010
V
GS
= 4.5 V
0.005
2000
C
oss
1000
C
rss
0.000
0
6
12
18
24
30
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 9.8 A
4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 9.8 A
1.4
3
r
DS(on)
- On-Resistance (
W)
(Normalized)
20
30
40
50
1.2
2
1.0
1
0.8
0
0
10
Q
g
- Total Gate Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.030
On-Resistance vs. Gate-to-Source Voltage
I
S
- Source Current (A)
T
J
= 150_C
10
r
DS(on)
- On-Resistance (
W
)
0.025
I
D
= 3 A
0.020
I
D
= 9.8 A
0.015
T
J
= 25_C
0.010
0.005
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71980
S-22122—Rev. B, 25-Nov-02
www.vishay.com
3
Si4933DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
Single Pulse Power
0.3
V
GS(th)
Variance (V)
I
D
= 500
mA
0.2
Power (W)
40
30
0.1
20
0.0
10
-0.1
-0.2
-50
-25
0
25
50
75
100
125
150
0
10
- 2
10
- 1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Ambient
100
r
DS(on)
Limited
I
DM
Limited
P(t) = 0.0001
10
I
D
- Drain Current (A)
P(t) = 0.001
P(t) = 0.01
1
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85_C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71980
S-22122—Rev. B, 25-Nov-02
Si4933DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71980
S-22122—Rev. B, 25-Nov-02
www.vishay.com
5
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