Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
r
DS(on)
(Ω)
0.023 at V
GS
= 10 V
0.032 at V
GS
= 4.5 V
0.020 at V
GS
= 10 V
0.027 at V
GS
= 4.5 V
I
D
(A)
7.0
5.6
7.4
6.4
FEATURES
• LITTLE FOOT
®
Plus
Integrated Schottky
• 100 % R
g
Tested
APPLICATIONS
• Logic DC/DC
- Notebook PC
RoHS
COMPLIANT
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.40 V at 1.0 A
I
F
(A)
2.0
D
1
SO-8
D
1
D
1
G
2
S
2
1
2
3
4
Top View
Ordering Information:
Si4914DY-T1-E3 (Lead (Pb)-free)
8
7
6
5
G
1
S
1
/D
2
S
1
/D
2
S
1
/D
2
G
1
N-Channel 1
MOSFET
S
1
/D
2
Schottky Diode
G
2
N-Channel 2
MOSFET
S
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Pulse Avalanche Current
L = 0.1 mH
Avalanche Energy
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
1.9
1.2
1.7
13
8.45
1.1
0.71
2.0
1.3
- 55 to 150
7.0
5.6
40
1.0
1.8
15
11
1.16
0.74
mJ
W
°C
5.5
4.3
Channel-1
10 sec
Steady State
30
20
7.4
6
40
0.95
5.7
4.5
A
Channel-2
10 sec
Steady State
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72938
S-61959-Rev. C, 09-Oct-06
www.vishay.com
1
t
≤
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Channel-1
Typ
52
90
30
Max
65
112
38
47
85
28
Channel-2
Typ
Max
60
107
35
°C/W
Unit
Si4914DY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.4 A
V
GS
= 4.5 V, I
D
= 5.6 A
V
GS
= 4.5 V, I
D
= 6.4 A
V
DS
= 15 V, I
D
= 7.0 A
V
DS
= 15 V, I
D
= 7.4 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= 1 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1.0
1.0
2.5
2.5
100
100
1
500
0.015
20
V
nA
µA
mA
A
0.019
0.016
0.026
0.022
19
22
0.75
0.36
5.6
7.3
2.3
2.8
1.7
2.2
2.3
1.6
6
7
13
13
27
35
9
10
30
30
0.023
0.020
0.032
0.027
Symbol
Test Conditions
Min
Typ
a
Max
Unit
20
20
Drain-Source On-State Resistance
b
r
DS(on)
Ω
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
g
fs
V
SD
S
1.1
0.40
8.5
11
nC
V
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 7.0 A
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 7.4 A
0.5
0.5
Channel-1
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
Channel-2
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
I
F
= 1.3 A, di/dt = 100 A/µs
I
F
= 2.2 A, di/dt = 100 µA/µs
3.6
2.5
10
11
20
20
40
53
15
15
50
50
Ω
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 1.0 A
I
F
= 1.0 A, T
J
= 150 °C
V
r
= 30 V
V
r
= 30 V, T
J
= 100 °C
V
r
= - 30 V, T
J
= 125 °C
V
r
= 10 V
Min
Typ
0.36
0.27
0.008
3.5
10
58
Max
0.40
0.31
0.50
10
100
Unit
V
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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