Specification Comparison
Vishay Siliconix
Si4894BDY vs. Si4894DY
Description: N-Channel, 30-V (D-S) MOSFET
Package:
SOIC-8
Pin Out:
Identical
Part Number Replacements:
Si4894BDY-T1 Replaces Si4894DY-T1
Si4894BDY-T1—E3 (Lead (Pb)-Free version) Replaces Si4894DY-T1—E3
Summary of Performance:
The Si4894BDY is the replacement for the original Si4894DY; both parts perform identically including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_C
UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (MOSFET Diode Conduction)
Power Dissipation
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
j
and T
stg
R
thJA
Si4894BDY
30
"20
12
9.5
40
2.3
2.5
1.6
−55
to 150
50
Si4894DY
30
"20
12.5
10
20
2.7
3.0
1.9
−55
to 150
42
Unit
V
A
W
_C
_C/W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
SPECIFICATIONS (T
J
= 25
_C
UNLESS OTHERWISE NOTED)
Si4894BDY
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Drain Source On Resistance
Forward Transconductance
Diode Forward Voltage
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
30
0.009
0.013
32
0.76
1.1
0.011
0.018
1.0
3.0
"100
1
30
0.010
0.015
30
0.7
1.1
0.012
0.018
0.8
"100
1
V
nA
mA
A
W
S
V
Si4894DY
Max
Min
Typ
Max
Unit
Symbol
Min
Typ
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
GS
= 10 V
V
GS
= 5 V
Q
g
Q
gs
Q
gd
R
g
0.9
25.4
13.2
5.3
4.3
1.8
2.7
1
38
20
20
11.5
3.0
4.5
2.4
W
30
17
nC
Switching
Turn-On Time
Turn Off Time
Turn-Off
Source-Drain Reverse Recovery Time
NS denotes parameter not specified in original data sheet.
Document Number: 73277
06-Jan-05
www.vishay.com
t
d(on)
t
r
t
d(off)
t
f
t
rr
13
10
33
10
25
20
15
50
15
40
10
5
30
10
30
20
10
60
20
60
ns
1
51单片机
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