Si4831DY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
–30
r
DS(on)
(W)
0.045 @ V
GS
= –10 V
0.090 @ V
GS
= –4.5 V
I
D
(A)
"5
"3.5
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
30
V
f
(V)
Diode Forward Voltage
0.53 V @ 3 A
I
F
(A)
3
S
K
SO-8
A
A
S
G
1
2
3
4
Top View
8
7
6
5
K
K
D
D
G
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
J
= 150_C) (MOSFET)
a, b
150 C)
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
a, b
Maximum Power Dissipation (Schottky)
a, b
Operating Junction and Storage Temperature Range
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
Document Number: 71061
S-61859—Rev. A, 10-Oct-99
www.vishay.com
S
FaxBack 408-970-5600
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
T
J
, T
stg
P
D
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
KA
V
GS
I
D
I
DM
I
S
I
F
I
FM
Limit
–30
30
"20
"5
"3.9
"20
–1.7
3
20
2
1.28
1.83
1.17
–55 to 150
Unit
V
A
W
_C
2-1
Si4831DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t
v
10 sec)
a
New Product
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Symbol
Typical
52
56
Maximum
62.5
68
100
110
33
40
Unit
R
thJA
Maximum Junction-to-Ambient (t = steady state)
a
82
91
27
_C/W
Maximum Junction-to-Foot
Schottky
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
R
thJF
32
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain Source On State Resistance
a
Drain-Source On-State
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –24 V, V
GS
= 0 V
V
DS
= –24 V, V
GS
= 0 V, T
J
= 75_C
V
DS
w
–5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –5 A
V
GS
= –4.5 V, I
D
= –3.5 A
V
DS
= –15 V, I
D
= –5 A
I
S
= –1.7 A, V
GS
= 0 V
–20
0.036
0.060
9
–0.75
–1.2
0.045
0.090
W
S
V
–1.0
"100
–1
–10
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1.7 A, di/dt = 100 A/ms
V
DD
= –15 V, R
L
= 15
W
15 V,
I
D
^
–1 A, V
GEN
= –10 V R
G
= 6
W
1A
10 V,
V
DS
= –15 V V
GS
= –5 V I
D
= –5 A
15 V,
5 V,
5
10
4.5
3.6
13
15
37
14
35
25
30
70
30
70
ns
20
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
V
F
Test Condition
I
F
= 3 A
I
F
= 3 A, T
J
= 125_C
V
r
= 30 V
V
r
= 30 V, T
J
= 75_C
V
r
= 30 V, T
J
= 125_C
V
r
= 15 V
Min
Typ
0.485
0.42
0.008
0.4
6.5
102
Max
0.53
0.47
0.1
5
20
Unit
V
Maximum R
M i
Reverse Leakage Current
L k
C
I
rm
C
T
mA
A
Junction Capacitance
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FaxBack 408-970-5600
pF
2-2
Document Number: 71061
S-61859—Rev. A, 10-Oct-99
Si4831DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 thru 5 V
20
Vishay Siliconix
MOSFET
Transfer Characteristics
16
I D – Drain Current (A)
16
I D – Drain Current (A)
12
4V
8
12
8
T
C
= 125_C
4
25_C
–55_C
0
4
3V
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.16
1500
Capacitance
C
iss
r DS(on)– On-Resistance (
W
)
1200
C – Capacitance (pF)
0.12
900
0.08
V
GS
= 4.5 V
600
C
oss
300
C
rss
V
GS
= 10 V
0.04
0
0
4
8
12
16
20
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
DS
= 10 V
I
D
= 5.7 A
V GS – Gate-to-Source Voltage (V)
r DS(on)– On-Resistance (
W
)
(Normalized)
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
–50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 5.7 A
6
4
2
0
0
4
8
12
16
20
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 71061
S-61859—Rev. A, 10-Oct-99
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si4831DY
Vishay Siliconix
New Product
MOSFET
On-Resistance vs. Gate-to-Source Voltage
0.20
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
r DS(on)– On-Resistance (
W
)
I S – Source Current (A)
10
T
J
= 150_C
0.16
0.12
T
J
= 25_C
0.08
I
D
= 5.7 A
0.04
1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.8
0.6
V GS(th) Variance (V)
0.4
0.2
–0.0
–0.2
8
–0.4
–0.6
–50
0
–25
0
25
50
75
100
125
150
I
D
= 250
mA
Power (W)
24
40
Single Pulse Power, Junction-to-Ambient
32
16
0.01
0.1
1
Time (sec)
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 82_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71061
S-61859—Rev. A, 10-Oct-99
Si4831DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Vishay Siliconix
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
40
10
I
R
– Reverse Current (mA)
5
SCHOTTKY
Forward Voltage Drop
I
F
– Forward Current (A)
1
T
J
= 150_C
1
0.1
30 V
10 V
0.01
T
J
= 25_C
0.001
0.0001
0
25
50
75
100
125
150
0.1
0
0.2
0.4
0.6
0.8
T
J
– Junction Temperature (_C)
V
F
– Forward Voltage Drop (V)
500
Capacitance
C
T
– Junction Capacitance (pF)
400
300
200
100
0
0
6
12
18
24
30
V
KA
– Reverse Voltage (V
Document Number: 71061
S-61859—Rev. A, 10-Oct-99
www.vishay.com
S
FaxBack 408-970-5600
2-5
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