勝特力科技
886-3-5753170
百年電子
86-755-83289224
Http://www.100y.com.tw
Specification Comparison
Vishay Siliconix
Si4814BDY vs. Si4814DY
Description:
Package:
Pin Out:
Dual
N-Channel, 30-V (D-S) MOSFET with Schottky Diode
SO-8
Identical
Part Number Replacements:
Si4814BDY-T1-E3 Replaces Si4814DY-T1-E3
Si4814BDY-T1-E3 Replaces Si4814DY-T1
Summary of Performance:
The Si4814BDY is the replacement to the original Si4814DY; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Si4814BDY
Si4814DY
Parameter
Symbol
Unit
Ch-1 Ch-2 Ch-1 Ch-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(MOSFET Diode Conduction)
Power Dissipation
T
A
= 25°C
T
A
= 70°C
Operating Junction & Storage Temperature Range
Maximum Junction-to-Ambient - MOSFET
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
7.5
I
D
I
DM
I
S
P
D
T
j
& T
stg
R
thJA
6
40
1.7
1.9
1.2
65
30
+20
7.8
6.3
40
1.8
2.0
1.3
60
7.0
5.6
40
1.7
1.9
1.2
65
30
+20
7.8
6
40
1.8
2.0
1.3
60
W
°C
°C/W
A
V
-55 to 150
-55 to 150
MOSFET SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
Parameter
Static
Ch-1
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
On-State Drain Current
V
GS
= 10 V
I
D(on)
Ch-2
Ch-1
V
GS
= 10 V
Drain-Source On-Resistance
V
GS
= 4.5 V
Forward Transconductance
Diode Forward Voltage
g
fs
V
SD
r
DS(on)
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
20
0.0145
0.015
0.019
0.018
30
35
0.75
0.47
1.1
0.5
0.018
0.018
0.023
0.022
1.5
1.5
3.0
2.7
+100
+100
1
100
20
20
0.0175
0.0165
0.027
0.022
17
20
0.7
0.47
1.1
0.5
V
S
0.021
0.020
0.0325
0.0265
Ω
A
0.8
0.8
NS
NS
+100
+100
1
100
nA
µA
V
Symbol
Min
Si4814BDY
Typ
Max
Min
Si4814DY
Typ
Max
Unit
勝特力科技
886-3-5753170
百年電子
86-755-83289224
Http://www.100y.com.tw
Document Number 74072
11-May-05
www.vishay.com
勝特力科技
886-3-5753170
百年電子
86-755-83289224
Http://www.100y.com.tw
Specification Comparison
Vishay Siliconix
MOSFET SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
Parameter
Dynamic
Total Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Qg
Qgs
Qgd
Rg
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
t
d(on)
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
Source-Drain Reverse Recovery Time
t
rr
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
6.6
8.9
2.9
3.4
2.3
2.4
1.9
2.3
8
9
11
13
21
27
6
9
28
24
10
14
6.5
9.7
1.5
2.6
2.7
3.8
1.6
1.8
12
13
13
13
22
29
8
12
50
46
10
15
nC
Symbol
Min
Si4814BDY
Typ
Max
Min
Si4814DY
Typ
Max
Unit
0.5
0.5
2.9
3.5
15
15
18
20
32
40
10
15
40
35
0.5
0.5
2.6
3.1
20
20
20
20
35
45
15
20
80
80
Ω
Switching
ns
SCHOTTKY SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
Parameter
Static
Forward Voltage Drop
V
F
T
J
= 25
o
C
T
J
= 125 C
T
J
= 25
o
C
Maximum Reverse Leakage Current
Junction Capacitance
Irm
T
J
= 100
o
C
T
J
= 125 C
C
T
o
o
Symbol
Min
Si4814BDY
Typ
0.47
0.36
0.004
0.7
3.0
50
Max
0.50
0.42
0.100
10
20
Min
Si4814DY
Typ
Max
0.47
0.36
0.004
0.7
3.0
50
0.50
0.42
0.100
10
20
Unit
nC
mA
pF
勝特力科技
886-3-5753170
百年電子
86-755-83289224
Http://www.100y.com.tw
Document Number 74072
11-May-05
www.vishay.com
stm32/stm8
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