* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72223
S-61005-Rev. D, 12-Jun-06
www.vishay.com
1
Si4511DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 10 V
V
DS
=
- 5 V, V
GS
= - 4.5 V
V
GS
= 10 V, I
D
= 9.6 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= - 4.5 V, I
D
= - 6.2 A
V
GS
= 4.5 V, I
D
= 8.6 A
V
GS
= - 2.5 V, I
D
= - 5 A
Forward Transconductance
b
Diode Forward Voltag
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 6.2 A
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 9.6 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
G
= 6
Ω
P-Channel
V
DD
= - 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
G
= 6
Ω
I
F
= 1.7 A, di/dt = 100 A/µs
I
F
= - 1.7 A, di/dt = 100 A/µs
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11.5
17
3.7
4.1
3.3
4.3
12
25
12
30
55
70
15
50
50
40
20
40
20
45
85
105
25
75
100
80
ns
18
20
nC
g
fs
V
SD
V
DS
= 15 V, I
D
= 9.6 A
V
DS
= - 15 V, I
D
= - 6.2 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= - 1.7 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
40
- 40
0.0115
0.022
0.0135
0.035
33
17
0.8
- 0.8
1.2
- 1.2
0.0145
0.033
0.017
0.050
S
V
Ω
0.6
- 0.6
1.8
1.4
± 100
± 100
1
-1
5
-5
A
µA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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