Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V
DS
(V)
N-Channel
P-Channel
20
- 20
r
DS(on)
(Ω)
0.020 at V
GS
= 4.5 V
0.030 at V
GS
= 2.5 V
0.060 at V
GS
= - 4.5 V
0.100 at V
GS
= - 2.5 V
I
D
(A)
9.1
7.5
- 5.3
- 4.1
FEATURES
• TrenchFET
®
Power MOSFET
Pb-free
Available
RoHS*
COMPLIANT
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information:
Si4500BDY-T1
Si4500BDY-T1-E3 (Lead (Pb)-free)
8
7
6
5
D
D
D
D
G
1
D
G
2
S
1
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a,b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
Maximum Power Dissipation
a,b
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
2.1
2.5
1.6
9.1
7.3
30
1.1
1.3
0.8
- 2.1
2.5
1.6
- 55 to 150
N-Channel
10 sec
Steady State
20
± 12
6.6
5.3
- 5.3
- 4.9
- 20
- 1.1
1.3
0.8
W
°C
P-Channel
10 sec
Steady State
- 20
± 12
- 3.8
- 3.1
A
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 Board.
b. t
≤
10 sec.
t
≤
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
N-Channel
Typ
40
75
20
Max
50
95
22
41
75
23
P-Channel
Typ
Max
50
95
26
°C/W
Unit
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
www.vishay.com
1
Si4500BDY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 4.5 V
V
DS
=
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 9.1 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= - 4.5 V, I
D
= - 5.3 A
V
GS
= 2.5 V, I
D
= 3.3 A
V
GS
= - 2.5 V, I
D
= - 1 A
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5.3 A
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 9.1 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
P-Channel
V
DD
= - 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
I
F
= 2.1 A, di/dt = 100 A/µs
I
F
= - 2.1 A, di/dt = 100 A/µs
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11
6.0
2.5
1.3
3.2
1.6
35
20
50
35
31
55
15
35
30
25
50
30
80
60
50
85
30
60
60
50
ns
17
9
nC
g
fs
V
SD
V
DS
= 15 V, I
D
= 9.1 A
V
DS
= - 15 V, I
D
= - 5.3 A
I
S
= 2.1 A, V
GS
= 0 V
I
S
= - 2.1 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
- 20
0.016
0.048
0.024
0.082
29
11
0.8
- 0.8
1.2
- 1.2
0.020
0.060
0.030
0.100
S
V
Ω
0.6
- 0.6
1.5
- 1.5
± 100
± 100
1
-1
5
-5
A
µA
V
nA
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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