Si4496DY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RT1
RT2
RT3
RT4
Junction to
CT1
CT2
CT3
CT4
Ambient
2.3490
29.5589
32.0670
26.1202
Ambient
1.1969 m
32.0544 m
1.4071
3.6901
Case
N/A
N/A
N/A
N/A
Case
N/A
N/A
N/A
N/A
Foot
250.9288 m
6.7329
9.1880
1.7701
Foot
563.0696 µ
13.6449 m
174.2752 m
4.8071 m
Thermal Capacitance (Joules/°C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 74109
Revision 02-Sep-05
www.vishay.com
1
Si4496DY_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RF1
RF2
RF3
RF4
Junction to
CF1
CF2
CF3
CF4
Note: NA indicates not applicable
Ambient
6.0619
27.5447
30.8157
25.6209
Ambient
5.6116 m
32.7967 m
843.7170 m
1.4531
Case
N/A
N/A
N/A
N/A
Case
N/A
N/A
N/A
N/A
Foot
2.5758
7.3337
4.1168
3.9913
Foot
2.6100 m
9.5520 m
193.9091 m
2.2668 m
Thermal Capacitance (Joules/°C)
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
www.vishay.com
2
Document Number: 74109
Revision 02-Sep-05
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