Si4431DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.040 @ V
GS
= –10 V
–30
30
0.070 @ V
GS
= –4.5 V
I
D
(A)
"5.8
"4.5
FEATURES
D
TrenchFETr Power MOSFET
D
100% UIS Tested
S
SO-8
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
D
P-Channel MOSFET
Ordering Information: Si4431DY-T1
Si4431DY-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25_C
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 70_C
I
D
I
DM
I
S
I
AS
E
AS
Symbol
V
DS
V
GS
Limit
–30
"20
"5.8
"4.6
"30
–2.3
20
20
2.5
1.6
–55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm
Document Number: 70151
S-51455—Rev. D, 01-Aug-05
www.vishay.com
Symbol
R
thJA
Limit
50
Unit
_C/W
1
Si4431DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –30 V, V
GS
= 0 V
V
DS
= –30 V, V
GS
= 0 V, T
J
= 70_C
V
DS
v
–5 V, V
GS
= –10 V
I
D( )
D(on)
V
DS
v
–5 V, V
GS
= –4.5 V
V
GS
= –10 V, I
D
= –5.3 A
r
DS( )
DS(on)
g
fs
V
SD
V
GS
= –4.5 V, I
D
= –2.0 A
V
DS
= –15 V, I
D
= –5.3 A
I
S
= –2.3 A, V
GS
= 0 V
–30
–7
0.029
0.047
9.3
–0.78
–1.2
0.040
0.070
A
–1.0
"100
–1
–25
V
nA
mA
Symbol
Test Condition
Min
Typ
A
Max
Unit
On-State
On State Drain Current
b
Drain-Source On-State
Drain Source On State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
W
S
V
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –2.3 A, di/dt = 100 A/ms
V
DD
= –15 V, R
L
= 15
W
15
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
V
DS
= –15 V, V
GS
= –10 V, I
D
= –5.3 A
22
3.95
3.5
4.5
11.5
12
38
15
50
6.1
20
20
55
25
80
ns
W
35
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
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Document Number: 70151
S-51455—Rev. D, 01-Aug-05
Si4431DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
Output Characteristics
30
V
GS
= 10, 9, 8, 7, 6, 5 V
24
I D – Drain Current (A)
I D – Drain Current (A)
24
30
25_C
T
C
= –55_C
125_C
Transfer Characteristics
18
4V
12
18
12
6
3V
0
0
2
4
6
8
10
6
0
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
2000
Capacitance
r DS(on)– On-Resistance (
W
)
0.16
C – Capacitance (pF)
1600
C
iss
1200
0.12
0.08
V
GS
= 4.5 V
0.04
V
GS
= 10 V
800
C
oss
C
rss
400
0.00
0
6
12
18
24
30
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
DS
= 15 V
I
D
= 5.3 A
2.0
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
8
1.6
V
GS
= 10 V
I
D
= 5.3 A
6
r
DS(on)
– On-Resistance
(Normalized)
0
5
10
15
20
25
1.2
4
0.8
2
0.4
0
0.0
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70151
S-51455—Rev. D, 01-Aug-05
www.vishay.com
3
Si4431DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
30
0.10
On-Resistance vs. Gate-to-Source Voltage
10
r DS(on)– On-Resistance (
W
)
0.08
I S – Source Current (A)
0.06
I
D
= 5.3 A
0.04
T
J
= 150_C
T
J
= 25_C
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
1.0
0.8
0.6
V GS(th) Variance (V)
0.4
0.2
–0.0
–0.2
10
–0.4
–0.6
–50
0
0.01
I
D
= 250
mA
40
50
Single Pulse Power
Power (W)
–25
0
25
50
75
100
125
150
30
20
0.10
1.00
Time (sec)
10.00
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
2. Per Unit Base = R
thJA
= 50_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70151
S-51455—Rev. D, 01-Aug-05
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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