Si4378DY
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(Ω)
0.0027 at V
GS
= 4.5 V
0.0042 at V
GS
= 2.5 V
I
D
(A)
25
22
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
• Ultra Low On-Resistance Using High
Density TrenchFET
®
Gen II Power MOSFET
Technology
• Q
g
Optimized
• 100 % R
g
Tested
APPLICATIONS
SO-8
S
S
S
G
1
2
3
4
Top View
S
Ordering Information:
Si4378DY-T1-E3 (Lead (Pb)-free)
Si4378DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
• Synchronous Rectification
• Point-Of-Load
D
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
P
D
T
J
, T
stg
3.5
2.2
- 55 to 150
2.9
40
1.6
1
W
°C
25
20
70
1.3
10 s
20
± 12
19
13
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
29
67
13
Maximum
35
80
16
°C/W
Unit
Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
www.vishay.com
1
Si4378DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.9 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 6
Ω
0.8
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 25 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
8500
1250
650
55
16
10
1.3
85
65
140
50
50
2.0
130
100
210
80
80
ns
Ω
nC
pF
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 25 A
V
GS
= 2.5 V, I
D
= 22 A
V
DS
= 10 V, I
D
= 25 A
I
S
= 2.9 A, V
GS
= 0 V
30
0.0022
0.0034
150
0.72
1.1
0.0027
0.0042
0.6
1.8
± 100
1
5
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
V
GS
= 5 V thru 2.5 V
50
I
D
- Drain Current (A)
50
60
I
D
- Drain Current (A)
40
40
30
30
20
2V
10
20
T
C
= 125 °C
10
25 °C
- 55 °C
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
www.vishay.com
2
Si4378DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.006
10000
C
iss
0.005
R
DS(on)
-
On-Resistance ( )
V
GS
= 2.5 V
C
-
Capacitance (pF)
8000
0.004
6000
0.003
V
GS
= 4.5 V
0.002
4000
2000
0.001
0
0
10
20
30
40
50
60
0
4
C
oss
C
rss
0.000
8
12
16
20
I
D
-
Drain Current (A)
V
DS
-
Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
V
DS
= 10 V
I
D
= 25 A
1.8
V
GS
= 4.5 V
I
D
= 25 A
Capacitance
-
Gate-to-Source Voltage (V)
5
1.6
4
-
On-Resistance
1.4
(Normalized)
3
1.2
2
R
DS(on)
1.0
V
GS
1
0.8
0
0
10
20
30
40
50
60
70
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
50
0.015
On-Resistance vs. Junction Temperature
0.012
T
J
= 150 °C
10
R
DS(on)
-
On-Resistance ( )
I
S
- Source Current (A)
I
D
= 25 A
0.009
0.006
T
J
= 25 °C
0.003
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
V
GS
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
-
Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
www.vishay.com
3
Si4378DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
I
D
= 250 µA
60
0.2
50
0.0
V
GS(th)
(V)
Power (W)
40
- 0.2
30
- 0.4
20
- 0.6
10
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
10 -
2
10 -
1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
10 ms
1
100 ms
1s
10 s
0.1
T
C
= 25 °C
Single Pulse
DC
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67 °C/W
t
1
t
2
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
1
Square Wave Pulse Duration (s)
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
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Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
Si4378DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-
4
10
-
3
10
-
2
10
-
1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72918.
Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
www.vishay.com
5
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