Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.0045 @ V
GS
= 10 V
0.0055 @ V
GS
= 4.5 V
I
D
(A)
20
19
D
TrenchFETr Power MOSFET
D
Optimized for “Low Side” Synchronous
Rectifier Operation
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
D
Synchronous Rectifiers
SO-8
D
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
Ordering Information: Si4362DY
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
a
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limits
30
"12
20
15
60
2.9
3.5
2.2
−55
to 150
Unit
A
W
THERMAL RESISTANCE RATINGS
a
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board, t
v
10 sec
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
Symbol
R
thJA
R
thJF
Typical
29
13
Maximum
35
16
Unit
_C/W
1
Si4362DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 19 A
V
DS
= 15 V, I
D
= 20 A
I
S
= 2.9 A, V
GS
= 0 V
30
0.0035
0.0042
90
0.75
1.1
0.0045
0.0055
0.6
"100
1
5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
g
= 6
W
0.5
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
42
12.8
7.7
1.3
17
14
158
43
50
2.2
30
25
230
65
80
ns
W
55
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V
GS
= 10 thru 3 V
50
40
30
20
10
0
0
2
4
6
8
10
2V
50
40
30
20
60
Transfer Characteristics
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
T
C
= 125_C
10
0
0.0
25_C
−55_C
1.5
2.0
2.5
3.0
0.5
1.0
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
2
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
8000
Capacitance
r
DS(on)
−
On-Resistance (
W
)
0.008
C
−
Capacitance (pF)
6000
C
iss
0.006
V
GS
= 4.5 V
0.004
V
GS
= 10 V
0.002
4000
2000
C
oss
C
rss
0.000
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
5
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 20 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 20 A
4
1.4
r
DS(on)
−
On-Resiistance
(Normalized)
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
0.6
−50
−25
0
25
50
75
100
125
150
Q
g
−
Total Gate Charge (nC)
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.025
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
r
DS(on)
−
On-Resistance (
W
)
0.020
I
S
−
Source Current (A)
0.015
T
J
= 25_C
0.010
I
D
= 20 A
0.005
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
−
Source-to-Drain Voltage (V)
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
0.000
0
2
4
6
8
10
V
GS
−
Gate-to-Source Voltage (V)
www.vishay.com
3
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
−0.0
Power (W)
−0.2
−0.4
−0.6
−0.8
−50
I
D
= 250
mA
60
50
Single Pulse Power
40
30
20
10
−25
0
25
50
75
100
125
150
0
10
−2
10
−1
1
Time (sec)
10
100
600
T
J
−
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
4
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
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