Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
R
DS(on)
(Ω)
0.011 at V
GS
= 10 V
0.016 at V
GS
= 4.5 V
0.0085 at V
GS
= 10 V
0.0095 at V
GS
= 4.5 V
I
D
(A)
10
8.2
14
13
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
- Game Stations
- Video Equipment
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.53 V at 3 A
SO-14
D
1
D
1
G
1
G
2
S
2
S
2
S
2
1
2
3
4
5
6
7
Top View
14
13
12
11
10
9
8
S
1
S
1
D
2
D
2
D
2
D
2
D
2
I
F
(A)
2
D
1
D
2
Schottky Diode
G
1
G
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
Ordering Information:
Si4310BDY-T1-E3 (Lead (Pb)-free)
Si4310BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Channel-1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.8
2
1.28
10
8
40
1.04
1.14
0.73
- 55 to 150
2.73
3.0
1.9
± 20
7.5
6
14
11
50
1.33
1.47
0.94
W
°C
10 s
Steady State
30
± 20
9.8
7.8
A
10 s
Channel-2
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typ.
53
92
35
Max.
62.5
110
42
Channel-2
Typ.
34
70
17
Max.
35
72
24
Schottky
Typ.
40
76
21
Max.
48
93
26
°C/W
Unit
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
www.vishay.com
1
Si4310BDY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 14 A
V
GS
= 4.5 V, I
D
= 8.2 A
V
GS
= 4.5 V, I
D
= 13 A
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 14 A
f = 1 MHz
Channel-1
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
Channel-2
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
I
F
= 1.8 A, dI/dt = 100 A/µs
I
F
= 2.73 V, dI/dt = 100 A/µs
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.90
0.3
790
1530
145
300
70
115
1580
3060
290
600
140
225
12
19
5.3
10
4.3
5
1.8
0.95
13
17
10
12
33
53
10
17
25
31
2.7
1.4
20
26
15
20
50
80
15
26
40
50
ns
Ω
2370
4590
435
900
210
340
18
30
nC
pF
g
fs
V
SD
V
DS
= 15 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 14 A
I
S
= 1.8 V, V
GS
= 0 V
I
S
= 2.73 V, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
30
0.009
0.013
30
60
0.76
0.485
1.1
0.53
0.011
0.016
Ω
0.0065 0.0085
0.0075 0.0095
S
V
1.0
1.0
3.0
3.0
100
100
1
100
15
4000
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
Si4310BDY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward voltage Drop
Symbol
V
F
Test Conditions
I
F
= 3 A
I
F
= 3 A, T
J
= 125 °C
V
R
= 30 V
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
V
R
= 30 V, T
J
= 75 °C
V
R
= 30 V, T
J
= 125 °C
V
R
= 15 V
Min.
Typ.
0.485
0.42
0.008
0.4
0.5
102
Max.
0.53
0.42
0.100
5
20
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
STM8S编译错误unable to allocate space for sections/blocks with a total # 欢迎使用Markdown编辑器 笔者用IAR for STM8 开发碰到很多奇怪的问题,都是因为优化等级引起的 首先看这个用dubug编译错误提示: unable to allocate space for sections/blocks with a tot...[详细]
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