Si6426DQ
N-Channel 2.5-V (G-S) Rated MOSFET
Product Summary
V
DS
(V)
20
r
DS(on)
(W)
0.035 @ V
GS
= 4.5 V
0.04 @ V
GS
= 2.5 V
I
D
(A)
"5.4
"4.9
D
TSSOP-8
D
S
S
G
1
2
3
4
D
Si6426DQ
8
7
6
5
D
S
S
D
G
Top View
S*
N-Channel MOSFET
*Source Pins 2, 3, 6, and 7
must be tied common.
Absolute Maximum Ratings (
T
A
= 25_C Unless Otherwise Noted
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
20
"8
"5.4
"4.2
"30
1.25
1.5
1.0
–55 to 150
Unit
V
A
W
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70174.
A SPICE Model data sheet is available for this product (FaxBack document #70545).
Symbol
R
thJA
Limit
83
Unit
_C/W
Siliconix
S-49534—Rev. A, 06-Oct-97
1
Si6426DQ
Specifications (T
J
= 25_C Unless Otherwise Noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 4.5 V
V
DS
w
5 V, V
GS
= 2.5 V
V
GS
= 4.5 V, I
D
= 5.4 A
r
DS(on)
g
fs
V
SD
V
GS
= 2.5 V, I
D
= 4.9 A
V
DS
= 10 V, I
D
= 5.4 A
I
S
= 1.25 A, V
GS
= 0 V
"20
"8
0.025
0.030
22
0.7
1.2
0.035
0.04
0.6
"100
1
5
V
nA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
On State Drain Current
a
On-State
I
D( )
D(on)
A
Drain-Source On State
Drain Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
W
S
V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.25 A, di/dt = 100 A/ms
V
DD
= 6 V, R
L
= 6
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 5.4 A
18
2.5
4
35
65
100
33
50
60
100
150
60
100
ns
35
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
2
Siliconix
S-49534—Rev. A, 06-Oct-97
Si6426DQ
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
40
V
GS
= 5 thru 3 V
2.5 V
32
I
D
– Drain Current (A)
I
D
– Drain Current (A)
20
25
Transfer Characteristics
24
2V
16
15
10
25_C
5
T
C
= 125_C
–55_C
8
1.5 V
0
0
1
2
3
4
5
1, 0.5 V
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
2800
2400
r
DS(on)
– On-Resistance (
W
)
0.04
C – Capacitance (pF)
V
GS
= 2.5 V
0.03
V
GS
= 4.5 V
2000
1600
Capacitance
C
oss
1200
800
400
C
rss
C
iss
0.02
0.01
0
0
6
12
18
24
30
36
I
D
– Drain Current (A)
0
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
8
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 5.4 A
6
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 5.4 A
r
DS(on)
– On-Resistance (
W
)
(Normalized)
0
6
12
18
24
30
1.5
4
1.0
2
0.5
0
0
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Siliconix
S-49534—Rev. A, 06-Oct-97
3
Si6426DQ
Typical Characteristics (25_C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
40
0.30
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
r
DS(on)
– On-Resistance (
W
)
0.24
I
S
– Source Current (A)
0.18
0.12
I
D
= 5.4 A
0.06
T
J
= 25_C
1
0.5
0.7
0.9
1.1
1.3
V
SD
– Source-to-Drain Voltage (V)
0
0
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
0.2
0.1
V
GS(th)
Variance (V)
–0.0
–0.1
–0.2
–0.3
–0.4
–50
Threshold Voltage
50
Single Pulse Power
40
I
D
= 250
mA
Power (W)
–25
0
25
50
75
100
125
150
30
20
10
0
0.001
0.01
0.1
Time (sec)
1
10
100
T
J
– Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 83_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
4
Siliconix
S-49534—Rev. A, 06-Oct-97
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