d. Maximum under Steady State conditions is 130 °C/W.
Document Number: 73700
S09-2275-Rev. C, 02-Nov-09
www.vishay.com
1
Si3951DV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 2.0 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 2.0 A
- 0.8
17
5
14
3
T
C
= 25 °C
- 1.7
- 10
- 1.2
26
8
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 5
Ω
I
D
≅
- 2 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 10 V, V
GS
= - 5.0 V, I
D
= - 2.5 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 2.5 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
250
80
55
3.4
3.2
0.5
1.4
8.5
9
30
32
16
13
14
45
48
24
ns
Ω
5.1
5
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
- 5 V, V
GS
= - 4.5 V
V
GS
=
- 4.5 V, I
D
= - 2.5 A
V
GS
=
- 2.5 V, I
D
= - 1.8 A
V
DS
= - 10 V, I
D
= - 2.5 A
- 10
0.092
0.164
5.5
0.115
0.205
- 0.6
- 20
- 16.7
2.1
- 1.5
± 100
-1
- 10
V
mV/°C
V
nA
µA
Α
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73700
S09-2275-Rev. C, 02-Nov-09
Si3951DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
10
25 °C, unless otherwise noted
5
V
GS
= 5
V
thru 3
V
8
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
4
6
V
GS
= 2.5
V
3
4
V
GS
= 2.0
V
2
V
GS
= 1.5
V
0
0
1
2
3
4
2
T
C
= 25 °C
1
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.30
500
Transfer Characteristics
R
DS(on)
- On-Resistance (m )
0.25
C - Capacitance (pF)
400
0.20
V
GS
= 2.5
V
0.15
V
GS
= 4.5
V
300
C
iss
200
C
oss
0.10
0.05
100
C
rss
0.00
0
2
4
6
8
10
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
5
I
D
= 2.6 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
4
V
GS
= 10
V
3
R
DS(on)
- On-Resistance
(
N
ormalized)
1.4
1.6
Capacitance
V
GS
= 4.5
V,
I
D
= 2.4 A
1.2
V
GS
= 2.5
V,
I
D
= 1.8 A
1.0
2
V
GS
= 16
V
1
0.8
0
0
1
2
3
4
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73700
S09-2275-Rev. C, 02-Nov-09
www.vishay.com
3
Si3951DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
R
DS(on)
- Drain-to-So
u
rce On-Resistance ( )
100
0.36
I
D
= 2.7 A
0.28
10
I
S
- So
u
rce C
u
rrent (A)
T
A
= 150 °C
1
0.20
T
A
= 125 °C
0.1
T
A
= 25 °C
0.01
0.12
T
A
= 25 °C
0.04
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.2
8
On-Resistance vs. Gate-to-Source Voltage
1.1
6
1.0
V
GS(th)
(
V
)
I
D
= 250
µA
Po
w
er (
W
)
4
0.9
0.8
2
0.7
0.6
-50
0
-25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
30
T
J
- Temperature ( °C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
Single Pulse Power (Junction-to-Ambient)
10 ms
1
100 ms
1s
10 s
DC
0.01
T
A
= 25 °C
Single Pulse
0.1
0.001
0.1
*
V
GS
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
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4
Document Number: 73700
S09-2275-Rev. C, 02-Nov-09
Si3951DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4
2.0
3
I
D
- Drain C
u
rrent (A)
Po
w
er (W)
1.5
2
1.0
1
0.5
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
As time goes by, people are increasingly concerned about their own and their families' health. However, existing monitoring devices for individual vital signs have struggled to gain market share du...[详细]
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