Si3911DV
New Product
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.145 @ V
GS
= –4.5 V
–20
0.200 @ V
GS
= –2.5 V
0.300 @ V
GS
= –1.8 V
I
D
(A)
–2.2
–1.8
–1.5
S
1
S
2
TSOP-6
Top View
G1
1
6
D1
G
1
3 mm
S2
2
5
S1
G
2
G2
3
4
D2
2.85 mm
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
DM
I
S
–1.05
1.15
0.73
–55 to 150
Symbol
V
DS
V
GS
5 secs
Steady State
–20
"8
Unit
V
–2.2
I
D
–1.8
"8
–1.8
–1.5
A
–0.75
0.83
0.53
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
93
130
90
Maximum
110
150
90
Unit
_C/W
C/W
1
Si3911DV
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –2.2 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –2.5 V, I
D
= –1.8 A
V
GS
= –1.8 V, I
D
= –1.0 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –5 V, I
D
= –2.2 A
I
S
= –1.05 A, V
GS
= 0 V
–5
0.115
0.163
0.240
5
–0.8
–1.1
0.145
0.200
0.300
S
V
W
–0.45
"100
–1
–10
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1.05 A, di/dt = 100 A/ms
V
DD
= –4 V, R
L
= 8
W
I
D
^
–1 A, V
GEN
= –4.5 V, R
G
= 6
W
V
DS
= –10 V, V
GS
= –4.5 V, I
D
= –2.2 A
5
1
0.9
12
29
24
30
20
20
50
45
50
40
ns
7.5
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
10
Transfer Characteristics
V
GS
= 4.5 thru 2.5 V
6
I D – Drain Current (A)
I D – Drain Current (A)
T
C
= –55_C
8
25_C
6
125_C
4
4
2V
2
1.5 V
2
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
Si3911DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.75
600
Vishay Siliconix
Capacitance
r DS(on)– On-Resistance (
W
)
0.60
C – Capacitance (pF)
500
C
iss
400
0.45
V
GS
= 1.8 V
0.30
V
GS
= 2.5 V
0.15
V
GS
= 4.5 V
300
200
C
oss
100
C
rss
0.00
0
2
4
I
D
– Drain Current (A)
6
8
0
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
5
V
DS
= 10 V
I
D
= 2.2 A
Gate Charge
1.8
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.2 A
V GS – Gate-to-Source Voltage (V)
r DS(on)– On-Resistance (
W
)
(Normalized)
0
1
2
3
4
5
4
1.6
1.4
3
1.2
2
1.0
1
0.8
0
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
0.5
On-Resistance vs. Gate-to-Source Voltage
r DS(on)– On-Resistance (
W
)
0.4
I
S
– Source Current (A)
T
J
= 150_C
1
0.3
I
D
= 2.2 A
0.2
T
J
= 25_C
0.1
0.1
0.00
0.3
0.6
0.9
1.2
1.5
0.0
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
www.vishay.com
3
Si3911DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
8
Single Pulse Power (Junction-to-Ambient)
0.3
6
V GS(th) Variance (V)
0.2
I
D
= 250
mA
0.1
Power (W)
4
0.0
2
–0.1
–0.2
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
Time (sec)
1
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 130_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
100
600
Square Wave Pulse Duration (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
4
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
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