• Portable Devices Such As Cell Phones, PDA, DSC, and
DVC
(4) S
TSOP-6
Top View
1
3 mm
6
2
5
(3) G
3
4
2.85 mm
(1, 2, 5, 6) D
Ordering Information:
Si3867DV-T1-E3 (Lead (Pb)-free)
Si3867DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.7
2.0
1.0
- 55 to 150
- 5.1
- 3.7
- 20
- 0.9
1.1
0.6
W
°C
5s
Steady State
- 20
± 12
- 3.9
- 2.8
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
45
90
25
Maximum
62.5
110
30
°C/W
Unit
Document Number: 72068
S09-2275-Rev. D, 02-Nov-09
www.vishay.com
1
Si3867DV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.7 A, dI/dt = 100 A/µs
V
DD
= - 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5.1 A
7
2.3
1.6
17
31
32
30
25
30
50
50
50
50
ns
11
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
- 5 V, V
GS
= - 4.5 V
V
GS
=
- 4.5 V, I
D
= - 5.1 A
V
GS
= - 3.3 V, I
D
= - 4.5 A
V
GS
= - 2.5 V, I
D
= - 2 A
V
DS
= - 5 V, I
D
= - 5.1 A
I
S
= - 1.7 A, V
GS
= 0 V
- 20
0.041
0.054
0.081
11
- 0.7
- 1.2
0.051
0.067
0.100
S
V
Ω
- 0.6
- 1.4
± 100
-1
-5
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
