Si3867DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.051 @ V
GS
= - 4.5 V
- 20
0.067 @ V
GS
= - 3.3 V
0.100 @ V
GS
= - 2.5 V
FEATURES
I
D
(A)
- 5.1
- 4.5
- 3.7
D
TrenchFETr Power MOSFET
D
PWM Optimized
APPLICATIONS
D
DC/DC
- HDD
- Power Supplies
D
Portable Devices Such As Cell Phones, PDA,
DSC, and DVC
(4) S
TSOP-6
Top View
1
3 mm
6
5
(3) G
2
3
4
(1, 2, 5, 6) D
P-Channel MOSFET
2.85 mm
Ordering Information: Si3867DV-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5 secs
Steady State
- 20
"12
Unit
V
- 5.1
- 3.7
- 20
- 1.7
2.0
1.0
- 55 to 150
- 3.9
- 2.8
A
- 0.9
1.1
0.6
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72068
S-31988—Rev. B, 13-Oct-03
www.vishay.com
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
C/W
1
Si3867DV
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= - 16 V, V
GS
= 0 V
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= - 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 5.1 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= - 3.3 V, I
D
= - 4.5 A
V
GS
= - 2.5 V, I
D
= - 2 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= - 5 V, I
D
= - 5.1 A
I
S
= - 1.7 A, V
GS
= 0 V
- 20
0.041
0.054
0.081
11
- 0.7
- 1.2
0.051
0.067
0.100
S
V
W
- 0.6
- 1.4
"100
-1
-5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.7 A, di/dt = 100 A/ms
V
DD
= - 10 V, R
L
= 10
W
I
D
^
- 1 A, V
GEN
= - 4.5 V, R
G
= 6
W
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5.1A
7
2.3
1.6
17
31
32
30
25
30
50
50
50
50
ns
11
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 5 thru 3.5 V
3V
I
D
- Drain Current (A)
20
Transfer Characteristics
T
C
= - 55_C
16
25_C
16
I
D
- Drain Current (A)
125_C
12
2.5 V
12
8
8
4
2V
1.5 V
0
1
2
3
4
5
4
0
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72068
S-31988—Rev. B, 13-Oct-03
2
Si3867DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
r
DS(on)
- On-Resistance (
W
)
1200
1000
C - Capacitance (pF)
V
GS
= 2.5 V
0.12
800
600
400
C
oss
200
0
0
4
8
12
16
20
0
4
8
12
16
20
C
rss
C
iss
Capacitance
0.16
0.08
V
GS
= 3.3 V
V
GS
= 4.5 V
0.04
0.00
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 5.1 A
4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 5.1 A
1.4
3
r
DS(on)
- On-Resistance (
W)
(Normalized)
4
6
8
1.2
2
1.0
1
0.8
0
0
2
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20
T
J
= 150_C
0.20
On-Resistance vs. Gate-to-Source Voltage
I
S
- Source Current (A)
10
r
DS(on)
- On-Resistance (
W
)
0.16
I
D
= 2 A
0.12
I
D
= 5.1 A
0.08
0.04
T
J
= 25_C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72068
S-31988—Rev. B, 13-Oct-03
www.vishay.com
3
Si3867DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.3
V
GS(th)
Variance (V)
I
D
= 250
mA
0.2
0.1
0.0
- 0.1
- 0.2
- 50
Power (W)
20
T
A
= 25_C
10
30
Single Pulse Power
25
5
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
100
Safe Operating Area
r
DS(on)
Limited
I
DM
Limited
P(t) = 0.0001
10
I
D
- Drain Current (A)
P(t) = 0.001
1
I
D(on)
Limited
T
A
= 25_C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
dc
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72068
S-31988—Rev. B, 13-Oct-03
Si3867DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72068
S-31988—Rev. B, 13-Oct-03
www.vishay.com
5
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