Specification Comparison
Vishay Siliconix
Si3863BDV vs. Si3863DV
Description:
Package:
Pin Out:
Load Switch with Level-Shift
TSOP-6
Identical
Part Number Replacements:
Si3863BDV-T1-E3 Replaces Si3863DV-T1-E3
Si3863BDV-T1-E3 Replaces Si3863DV-T1
Summary of Performance:
The Si3863BDV is an upgrade to the original Si3863DV; both parts perform identically, including limits to the parametric tables
below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si3863BDV
Si3863DV
Unit
Input Voltage
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conduction
Power Dissipation
Operating Junction & Storage Temperature Range
Maximum Junction-to-Ambient
Continuous
Pulsed
V
IN
V
ON/OFF
I
L
I
S
P
D
T
j
& T
stg
R
thJA
12
8
+2.5
+5
-1
0.83
-55 to 150
150
12
8
+2.5
+5
-1
0.83
-55 to 150
150
W
°C
°C/W
V
A
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
Parameter
OFF Characteristic
Reverse Leakage Current
Diode Forward Voltage
Symbol
I
FL
V
SD
V
IN
V
IN
= 4.5 V
V
IN
= 3.0 V
V
IN
= 2.5 V
r
DS(on)
Min
Si3863BDV
Typ
Max
1
Min
Si3863DV
Typ
Max
1
-0.75
-1
12
0.105
0.125
0.165
Unit
uA
V
nC
Ω
Ω
Ω
A
A
-0.75
2.5
0.057
0.082
0.110
1
-1
12
0.075
0.105
0.140
1
1
2.5
Dynamic
Input Voltage Range
On-Resistance (p-channel) @ 1A
0.086
0.105
0.135
On-State (p-channel) Drain-Current
V
IN
= 10 V
V
IN
= 5 V
I
D(on)
1
Document Number 74118
27-May-05
www.vishay.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
