Si3812DV
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
20
FEATURES
I
D
(A)
2.4
1.8
r
DS(on)
(W)
0.125 @ V
GS
= 4.5 V
0.200 @ V
GS
= 2.5 V
D
LITTLE FOOT
Plust
D
100% R
g
Tested
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
20
V
f
(V)
Diode Forward Voltage
0.48 V @ 0.5 A
I
F
(A)
0.5
TSOP-6
Top View
A
3 mm
1
6
5
K
G
S
2
N/C
D
K
G
3
4
D
2.85 mm
Ordering Information: Si3812DV-T1
S
N-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
J
= 150_C) (MOSFET)
a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
a
Maximum Power Dissipation (Schottky)
a
Operating Junction and Storage Temperature Range
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71069
S-31725—Rev. E, 18-Aug-03
www.vishay.com
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
T
J
, T
stg
P
D
Conduction)
a
T
A
= 25_C
T
A
= 85_C
Symbol
V
DS
V
KA
V
GS
I
D
I
DM
I
S
I
F
I
FM
5 sec
20
20
"12
2.4
1.7
8
1.05
0.5
8
1.15
0.59
1.0
0.52
Steady State
Unit
V
2.0
1.4
0.75
0.5
8
0.83
0.53
0.76
0.48
- 55 to 150
_C
W
A
1
Si3812DV
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
J
ti t A bi t
t
v
5 sec
Device
MOSFET
Schottky
MOSFET
Steady St t
St d State
Schottky
MOSFET
Schottky
Symbol
Typical
93
103
Maximum
110
125
150
165
90
95
Unit
R
thJA
Junction-to-Ambient
a
J
ti t A bi t
130
140
_C/W
Junction-to-Foot
Junction to Foot (MOSFET Drain Schottky Kathode)
Drain,
Notes
a. Surface Mounted on 1” x1” FR4 Board.
Steady State
R
thJF
75
80
MOSFET + SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Schottky Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
w
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 2.4 A
V
GS
= 2.5 V, I
D
= 1.0 A
V
DS
= 5 V, I
D
= 2.4 A
I
S
= 1.5 A, V
GS
= 0 V
5
0.100
0.160
5
0.79
1.1
0.125
0.200
W
S
V
0.6
"100
1
10
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3.0 A, di/dt = 100 A/ms
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
1
10
30
14
6
30
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 2.4 A
2.1
0.3
0.4
3.7
17
50
25
12
50
ns
W
4.0
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
V
F
Test Condition
I
F
= 0.5
I
F
= 0.5, T
J
= 125_C
V
r
= 20
V
r
= 20, T
J
= 75_C
V
r
= 20, T
J
= 125_C
Min
Typ
0.42
0.33
0.002
0.06
1.5
31
Max
0.48
0.4
0.100
1
10
Unit
V
Maximum Reverse Leakage Current
g
I
rm
mA
Junction Capacitance
www.vishay.com
C
T
V
r
= 10 V
pF
2
Document Number: 71069
S-31725—Rev. E, 18-Aug-03
Si3812DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
MOSFET
10
Output Characteristics
V
GS
= 4.5 thru 3.5 V
Transfer Characteristics
T
C
= - 55_C
8
I
D
- Drain Current (A)
3V
I
D
- Drain Current (A)
8
25_C
6
2.5 V
4
2V
1.5 V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
6
125_C
4
2
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
- Gate-to-Source Voltage (V)
0.5
On-Resistance vs. Drain Current
300
250
C - Capacitance (pF)
200
150
100
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.4
C
iss
0.3
V
GS
= 2.5 V
V
GS
= 4.5 V
0.1
0.2
C
oss
50
C
rss
0
0.0
0
1
2
3
4
5
6
7
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
4.5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 2.4 A
Gate Charge
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.4 A
2.7
1.8
0.9
0.0
0.0
0.5
1.0
1.5
2.0
2.5
r
DS(on)
- On-Resistance (
W)
(Normalized)
3.6
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 71069
S-31725—Rev. E, 18-Aug-03
www.vishay.com
3
Si3812DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.40
MOSFET
On-Resistance vs. Gate-to-Source Voltage
I
D
= 2.4 A
r DS(on)- On-Resistance (
W
)
0.32
I
S
- Source Current (A)
I
D
= 1 A
1
T
J
= 150_C
0.24
0.16
T
J
= 25_C
0.08
0.1
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
0.2
V
GS(th)
Variance (V)
6
Power (W)
8
Single Pulse Power, Junction-to-Ambient
- 0.0
4
- 0.2
2
- 0.4
- 0.6
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
Time (sec)
1
10
30
T
J
- Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71069
S-31725—Rev. E, 18-Aug-03
4
Si3812DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
10
I
R
- Reverse Current (mA)
5
SCHOTTKY
Forward Voltage Drop
I
F
- Forward Current (A)
1
T
J
= 150_C
1
0.1
20 V
0.01
10 V
T
J
= 25_C
0.001
0.0001
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
150
0.1
0
0.2
0.4
0.6
0.8
1.0
V
F
- Forward Voltage Drop (V)
Capacitance
C
T
- Junction Capacitance (pF)
120
90
60
30
0
0
4
8
12
16
20
V
KA
- Reverse Voltage (V
Document Number: 71069
S-31725—Rev. E, 18-Aug-03
www.vishay.com
5
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