Si3552DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
30
FEATURES
r
DS(on)
(W)
0.105 @ V
GS
= 10 V
0.175 @ V
GS
= 4.5 V
0.200 @ V
GS
= - 10 V
0.360 @ V
GS
= - 4.5 V
I
D
(A)
2.5
2.0
- 1.8
- 1.2
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
P-Channel
P Channel
- 30
TSOP-6
Top View
G1
3 mm
1
6
5
D1
D
1
S
2
S2
2
S1
G
1
G
2
G2
3
4
D2
2.85 mm
S
1
Ordering Information: Si3552DV-T1
N-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
a,
Continuous Drain Current (T
J
= 150_C)
a b
Symbol
V
DS
V
GS
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
N-Channel
30
"20
2.5
2.0
8
1.05
1.15
0.73
P-Channel
- 30
"20
- 1.8
- 1.2
-7
- 1.05
Unit
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
a,
Maximum Power Dissipation
a b
A
W
_C
Operating Junction and Storage Temperature Range
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Lead
Notes
a. Surface Mounted on FR4 Board.
b. t
v
5 sec
Document Number: 70971
S-31725—Rev. B, 18-Aug-03
www.vishay.com
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJL
Typical
93
130
75
Maximum
110
150
90
Unit
_C/W
C/W
1
Si3552DV
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= - 24 V, V
GS
= 0 V, T
J
= 55_C
On-State
On State Drain Current
a
I
D( )
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= - 5 V, V
GS
= - 10 V
V
GS
= 10 V, I
D
= 2.5 A
Drain-Source On-State
Drain Source On State Resistance
a
r
DS( )
DS(on)
V
GS
= - 10 V, I
D
= - 1.8 A
V
GS
= 4.5 V, I
D
= 2.0 A
V
GS
= - 4.5 V, I
D
= - 1.2 A
Forward Transconductance
a
g
f
fs
V
SD
V
DS
= 10 V, I
D
= 2.5 A
V
DS
= - 15 V, I
D
= - 1.8 A
I
S
= 1.05 A, V
GS
= 0 V
I
S
= - 1.05 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
-5
0.085
0.165
0.140
0.298
4.3
2.4
0.81
- 0.83
1.10
- 1.10
0.105
0.200
0.175
0.360
S
W
1.0
- 1.0
"100
"100
1
-1
5
-5
A
mA
V
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body
Gate Body Leakage
I
GSS
nA
Diode Forward Voltage
a
V
Dynamic
b
Total Gate Charge
Q
g
N-Channel
V
DS
= 15 V, V
GS
= 5 V, I
D
= 1.8 A
P-Channel
V
DS
= - 15 V V
GS
= - 5 V, I
D
= - 1.8 A
V,
V
18
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P Channel
P-Channel
V
DD
= - 15 V, R
L
= 1
W
1 V
15
I
D
^
- 1 A, V
GEN
= - 10 V, R
G
= 6
W
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
F
= 1.05 A, di/dt = 100 A/ms
I
F
= - 1.05 A, di/dt = 100 A/ms
N-Ch
P-Ch
0.5
3
7
8
9
12
13
12
5
7
35
30
2.1
2.4
0.7
0.9
0.7
0.8
2.4
11
11
12
14
18
20
18
8
11
60
60
ns
W
3.2
3.6
nC
Gate-Source
Gate Source Charge
Q
gs
Q
gd
d
R
g
t
d( )
d(on)
t
r
t
d( ff)
d(off)
t
f
t
rr
Gate-Drain
Gate Drain Charge
Gate Resistance
Turn-On
Turn On Delay Time
Rise Time
Turn-Off
Turn Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 70971
S-31725—Rev. B, 18-Aug-03
Si3552DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
NCHANNEL
10
Output Characteristics
V
GS
= 10 thru 5 V
Transfer Characteristics
T
C
= - 55_C
8
I D - Drain Current (A)
I D - Drain Current (A)
8
25_C
6
4V
6
125_C
4
4
2
2V
0
0
1
2
3
3V
2
0
4
5
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
0.25
On-Resistance vs. Drain Current
300
250
C - Capacitance (pF)
200
150
100
C
oss
50
0
C
rss
0
5
Capacitance
r DS(on)- On-Resistance (
W
)
0.20
V
GS
= 4.5 V
V
GS
= 10 V
C
iss
0.15
0.10
0.05
0.00
0
1
2
3
4
5
6
7
I
D
- Drain Current (A)
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
10
Gate Charge
1.8
1.6
r DS(on)- On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
0.4
- 50
On-Resistance vs. Junction Temperature
V GS - Gate-to-Source Voltage (V)
8
V
DS
= 15 V
I
D
= 1.8 A
V
GS
= 10 V
I
D
= 2.5 A
6
4
2
0
0
1
2
3
4
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 70971
S-31725—Rev. B, 18-Aug-03
www.vishay.com
3
Si3552DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.40
NCHANNEL
On-Resistance vs. Gate-to-Source Voltage
I
D
= 2 A
r
DS(on)
- On-Resistance (
W
)
0.32
I
D
= 2.5 A
I
S
- Source Current (A)
1
T
J
= 150_C
0.24
0.16
T
J
= 25_C
0.08
0.1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
- 0.0
Power (W)
- 0.2
- 0.4
2
- 0.6
- 0.8
- 50
4
I
D
= 250
mA
6
8
Single Pulse Power (Junction-to-Ambient)
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
30
T
J
- Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 70971
S-31725—Rev. B, 18-Aug-03
4
Si3552DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
NCHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
V
GS
= 10 thru 7 V
8
I D - Drain Current (A)
5V
I D - Drain Current (A)
PCHANNEL
8
Output Characteristics
6V
Transfer Characteristics
T
C
= - 55_C
6
25_C
125_C
6
4
4
4V
2
2V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
3V
2
0
0
1
2
3
4
5
6
V
GS
- Gate-to-Source Voltage (V)
0.6
0.5
r DS(on)- On-Resistance (
W
)
0.4
0.3
0.2
0.1
0.0
0
1
On-Resistance vs. Drain Current
300
Capacitance
240
V
GS
= 4.5 V
C - Capacitance (pF)
C
iss
180
V
GS
= 10 V
120
C
oss
60
C
rss
0
6
0
2
3
4
5
6
7
I
D
- Drain Current (A)
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
Document Number: 70971
S-31725—Rev. B, 18-Aug-03
5
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