This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3499DV
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= - 8 V, V
GS
= 0 V
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 5 V, V
GS
= - 4.5 V
V
GS
½
- 4.5 V, I
D
= - 7 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 2.5 V, I
D
= - 6.2 A
V
GS
= - 1.8 V, I
D
= - 5.2 A
V
GS
= - 1.5 V, I
D
= - 3 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.7 A, dI/dt = 100 A/µs
V
DD
= - 4 V, R
L
= 4
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
4
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 7 A
28
2.9
5.8
8.5
27
65
210
110
40
13
40
100
315
165
70
ns
42
nC
g
fs
V
SD
V
DS
= - 5 V, I
D
= - 7 A
I
S
= - 1.7 A, V
GS
= 0 V
- 20
0.019
0.024
0.028
0.035
28
- 0.63
- 1.1
0.023
0.029
0.036
0.048
S
V
- 0.35
- 0.75
± 100
-1
- 10
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 5 V thru 2 V
25
I
D
-
Drain Current (A)
I
D
-
Drain Current (A)
25
30
20
1.5 V
15
20
15
10
10
T
C
= 125 °C
5
1V
0
0
1
2
3
4
5
V
DS
-
Drain-to-Source Voltage (V)
5
25 °C
- 55
°C
0
0.0
0.4
0.8
1.2
1.6
2.0
V
GS
-
Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 73138
S11-1140-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3499DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.10
3500
3000
R
DS(on)
-
On-Resistance (W)
0.08
C - Capacitance (pF)
C
iss
2500
2000
1500
C
oss
1000
C
rss
500
0
0.06
V
GS
= 1.5 V
0.04
V
GS
= 1.8 V
V
GS
= 2.5 V
0.02
V
GS
= 4.5 V
0.00
0
5
10
15
20
25
30
I
D
- Drain Current (A)
0
1
2
3
4
5
6
7
8
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
R
DS(on)
- On-Resistance (Normalized)
Capacitance
1.6
V
DS
= 4 V
I
D
= 7 A
V
GS
- Gate-to-Source Voltage (V)
5
V
GS
= 4.5 V
I
D
= 7 A
1.4
4
1.2
3
1.0
2
1
0.8
0
0
6
12
18
24
30
36
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
30
0.10
On-Resistance vs. Junction Temperature
10
I
S
- Source Current (A)
0.08
0.06
T
J
= 150 °C
1
T
J
= 25 °C
R
DS(on)
-
0.04
I
D
= 7 A
0.02
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
V
SD
- Source-to-Drain Voltage (V)
2
3
4
V
GS
- Gate-to-Source Voltage (V)
5
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73138
S11-1140-Rev. C, 13-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?73138.
Document Number: 73138
S11-1140-Rev. C, 13-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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