Si3481DV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
r
DS(on)
(Ω)
0.048 at V
GS
= - 10 V
0.079 at V
GS
= - 4.5 V
I
D
(A)
- 5.3
- 4.1
FEATURES
• TrenchFET
®
Power MOSFET
APPLICATIONS
• Load Switch
RoHS
COMPLIANT
TSOP-6
Top View
(4) S
1
6
(3) G
3 mm
2
5
3
4
(1, 2, 5, 6) D
2.85 mm
P-Channel MOSFET
Ordering Information:
Si3481DV-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.7
2.0
1.3
- 55 to 150
- 5.3
- 4.2
- 20
- 0.95
1.14
0.73
W
°C
5 sec
Steady State
- 30
± 20
- 4.0
- 3.2
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t
≤
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
55
90
30
Maximum
62.5
110
36
°C/W
Unit
Document Number: 72105
S-60422-Rev. C, 20-Mar-06
www.vishay.com
1
Si3481DV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.7 A, di/dt = 100 A/µs
V
DD
= - 15 V, R
L
= 15
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 6
Ω
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 5.3 A
15.5
2.5
4.3
11
14
60
35
30
17
22
90
55
60
ns
25
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
≤
- 5 V, V
GS
= - 10 V
V
GS
=
- 10 V, I
D
= - 5.3 A
V
GS
= - 4.5 V, I
D
= - 2 A
V
DS
= - 15 V, I
D
= - 5.3 A
I
S
= - 1.7 A, V
GS
= 0 V
- 20
0.038
0.063
12
- 0.85
- 1.2
0.048
0.079
- 1.0
-3
± 100
-1
-5
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C unless noted
20
V
GS
= 10 thru 5 V
T
C
= 125 °C
15
I
D
- Drain Current (A)
4V
I
D
- Drain Current (A)
16
20
12
10
8
5
3V
4
25 °C
- 55 °C
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 72105
S-60422-Rev. C, 20-Mar-06
Si3481DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
0.15
25 °C unless noted
1200
r
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
0.12
900
C
iss
600
0.09
V
GS
= 4.5 V
0.06
V
GS
= 10 V
0.03
300
C
oss
C
rss
0.00
0
5
10
I
D
- Drain Current (A)
15
20
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 5.3 A
r
DS(on)
- On-Resistance
(Normalized)
8
1.4
1.6
V
GS
= 10 V
I
D
= 5.3 A
Capacitance
6
1.2
4
1.0
2
0.8
0
0
4
8
12
16
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
0.20
On-Resistance vs. Junction Temperature
30
I
S
- Source Current (A)
T
J
= 150 °C
10
r
DS(on)
- On-Resistance (Ω)
0.16
I
D
= 2 A
0.12
I
D
= 5.3 A
0.08
T
J
= 25 °C
0.04
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72105
S-60422-Rev. C, 20-Mar-06
www.vishay.com
3
Si3481DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless noted
0.6
40
0.4
V
GS(th)
Variance (V)
I
D
= 250 µA
Power (W)
0.2
32
24
0.0
16
- 0.2
8
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
1
10
100
600
T
J
- Temperature (°C)
Time (sec)
Threshold Voltage
100
I
DM
Limited
r
DS(on)
Limited
10
I
D
- Drain Current (A)
Single Pulse Power
P(t) = 0.0001
1
I
D(on)
Limited
T
A
= 25 °C
Single Pulse
BV
DSS
Limited
0.01
0.1
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.1
1
10
100
V
DS -
Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which r
DS(on)
is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72105
S-60422-Rev. C, 20-Mar-06
Si3481DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
http://www.vishay.com/ppg?72105.
Document Number: 72105
S-60422-Rev. C, 20-Mar-06
www.vishay.com
5
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