Si3469DV
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
−20
D
TrenchFETr Power MOSFET
I
D
(A)
−6.7
−5.1
r
DS(on)
(W)
0.030 @ V
GS
=
−10
V
0.051 @ V
GS
=
−4.5
V
APPLICATIONS
D
Load Switch
−
Notebook PC
−
Game Machine
−
Desktop
TSOP-6
Top View
1
3 mm
6
5
(4) S
(3) G
2
3
4
(1, 2, 5, 6) D
2.85 mm
Ordering Information: Si3469DV-T1—E3 (Lead Free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5 secs
Steady State
−20
"20
Unit
V
−6.7
−5.3
−25
−1.7
2.0
1.3
−55
to 150
−5.0
−4.0
A
−0.95
1.14
0.73
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72676
S-40271—Rev. A, 23-Feb-04
www.vishay.com
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
C/W
1
Si3469DV
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
=
−20
V, V
GS
= 0 V
V
DS
=
−20
V, V
GS
= 0 V, T
J
= 85_C
V
DS
v
−5
V, V
GS
=
−10
V
V
GS
=
−10
V, I
D
=
−6.7
A
V
GS
=
−4.5
V, I
D
=
−2
A
V
DS
=
−15
V, I
D
=
−6.7
A
I
S
=
−1.7
A, V
GS
= 0 V
−25
0.024
0.041
15
−0.8
−1.2
0.030
0.051
−1.0
−3
"100
−1
−5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
=
−1.7
A, di/dt = 100 A/ms
V
DD
=
−10
V, R
L
= 10
W
I
D
^
−1
A, V
GEN
=
−10
V, R
G
= 6
W
f = 1 MHz
V
DS
=
−10
V, V
GS
=
−10
V, I
D
=
−6.7
A
20
3.8
4.8
9
10
12
50
35
25
15
20
75
55
50
ns
W
30
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25
V
GS
= 10 thru 5 V
20
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
20
25
Transfer Characteristics
15
4V
15
10
10
5
3V
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
5
T
C
= 125_C
25_C
−55_C
3.0
4.0
5.0
0
0.0
1.0
2.0
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72676
S-40271—Rev. A, 23-Feb-04
www.vishay.com
2
Si3469DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.16
r
DS(on)
−
On-Resistance (
W
)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
5
10
15
20
25
0
0
4
8
12
16
20
V
GS
= 4.5 V
V
GS
= 10 V
C
−
Capacitance (pF)
1200
C
iss
1500
Vishay Siliconix
Capacitance
900
600
C
oss
300
C
rss
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 6.7 A
8
r
DS(on)
−
On-Resiistance
(Normalized)
1.4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 6.7 A
6
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
Q
g
−
Total Gate Charge (nC)
0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.10
On-Resistance vs. Gate-to-Source Voltage
I
S
−
Source Current (A)
T
J
= 150_C
10
r
DS(on)
−
On-Resistance (
W
)
0.08
I
D
= 2 A
0.06
I
D
= 6.7 A
0.04
T
J
= 25_C
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72676
S-40271—Rev. A, 23-Feb-04
www.vishay.com
3
Si3469DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
50
Single Pulse Power
0.4
V
GS(th)
Variance (V)
I
D
= 250
mA
Power (W)
0.2
40
30
0.0
20
−0.2
10
−0.4
−50
−25
0
25
50
75
100
125
150
0
10
−3
10
−2
10
−1
1
10
100
600
T
J
−
Temperature (_C)
Time (sec)
100
Safe Operating Area
r
DS(on)
Limited
I
DM
Limited
P(t) = 0.0001
10
I
D
−
Drain Current (A)
P(t) = 0.001
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
P(t) = 1
P(t) = 10
dc
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90_C/W
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72676
S-40271—Rev. A, 23-Feb-04
Si3469DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72676
S-40271—Rev. A, 23-Feb-04
www.vishay.com
5
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