Si3460BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
20
±8
8
a
7.1
6.7
b, c
5.4
b, c
20
2.9
1.7
b, c
3.5
2.2
2
b, c
1.3
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
I
DM
I
S
P
D
W
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
50
30
Maximum
62.5
36
Unit
°C/W
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
www.vishay.com
1
Si3460BDV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5.4 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5.4 A, V
GS
=
0 V
0.8
20
9
12
8
T
C
= 25 °C
8
20
1.2
40
20
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1.9
Ω
I
D
≅
5.4 A, V
GEN
= 8 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1.9
Ω
I
D
≅
5.4 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 10 V, V
GS
= 8 V, I
D
= 8 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 8 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
860
110
65
16
9
1.4
1.4
3.2
7
60
25
6
5
15
25
5
15
90
40
10
10
25
40
10
ns
Ω
24
13.5
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≤
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 5.1 A
V
GS
=
2.5 V, I
D
= 4.7 A
V
GS
=
1.8 V, I
D
= 2.5 A
V
DS
= 10 V, I
D
= 5.1 A
20
0.023
0.027
0.033
22
0.027
0.032
0.040
S
Ω
0.45
20
22.5
- 2.9
1.0
± 100
1
10
V
mV/°C
V
ns
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
Si3460BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 5
V
thru 2
V
8
15
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
6
10
10
1.5
V
4
T
C
= 125 °C
2
25 °C
- 55 °C
5
1
V
0
0.0
0.4
0.8
1.2
1.6
2.0
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.060
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
V
GS
= 1.8
V
C - Capacitance (pF)
0.050
900
C
iss
0.040
600
0.030
V
GS
= 2.5
V
300
C
oss
0.020
0
5
10
I
D
- Drain Current (A)
V
GS
= 4.5
V
15
20
0
0
C
rss
4
8
12
16
20
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
8
7
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
6
5
4
3
2
1
0
0
3
6
9
12
15
18
0.6
- 50
V
DS
= 16
V
I
D
=
8
A
1.8
Capacitance
V
DS
= 10
V
I
D
=
8
A
R
DS(on)
- On-Resistance
(
N
ormalized)
1.6
I
D
= 5.1 A
1.4
1.2
1.0
0.8
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
www.vishay.com
3
Si3460BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.08
0.07
R
DS(on)
-On-Resistance (Ω)
I
S
- Source Current (A)
0.06
0.05
0.04
0.03
0.02
0.01
1
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
- Source-to-Drain
Voltage
(V)
0.00
0
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
I
D
= 5.1 A
125 °C
I
D
= 5.1 A
25 °C
T
J
= 150 °C
10
T
J
= 25 °C
Source-Drain Diode Forward Voltage
0.8
I
D
= 250
µA
40
50
On-Resistance vs. Gate-to-Source Voltage
0.7
0.6
Po
w
er (
W
)
V
GS(th)
(V)
30
0.5
20
0.4
10
0.3
0.2
- 50
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
Single Pulse Power (Junction-to-Ambient)
1 ms
1
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
*
V
GS
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
0.1
T
A
= 25 °C
Single Pulse
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
Si3460BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
4
8
3
Drain C
u
rrent (A)
Package Limited
6
Po
w
er Dissipation (
W
)
2
4
1
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Foot (Drain) Temperature ( C)
Foot (Drain) Temperature ( C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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